| Presentation | 2020-11-26 Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells Takumi Yamaguchi, Kyosuke Ariga, Keito Mori, Atushi A. Yamaguchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Internal quantum efficiency in III-nitride semiconductor light emitting layers is usually estimated from the experimental results of the temperature dependence of photoluminescence intensity. In this method, the internal quantum efficiency at extremely low temperature is assumed as 100%, and the decrease in emission intensity with increasing temperature is considered to be caused only by the decrease in internal quantum efficiency. Since the principle of the method is easy to understand and the measurement is relatively simple, it is frequently used. However, the method cannot always provide accurate values of the internal quantum efficiency. In this study, we have measured the temperature dependence of emission intensity at various excitation wavelengths for the same InGaN quantum-well sample, and have shown that the estimated internal quantum efficiency strongly depends on the excitation wavelength. Furthermore, the experimental results have been semi-quantitatively reproduced by the simple theoretical model in which the temperature dependence of excited carrier density due to temperature-induced bandgap shift. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InGaN quantum wells / Internal quantum efficiency / temperature-induced photoluminescence quenching |
| Paper # | ED2020-2,CPM2020-23,LQE2020-53 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / CPM / ED |
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| Conference Date | 2020/11/26(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU) |
| Vice Chair | Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.) |
| Assistant | Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells |
| Sub Title (in English) | |
| Keyword(1) | InGaN quantum wells |
| Keyword(2) | Internal quantum efficiency |
| Keyword(3) | temperature-induced photoluminescence quenching |
| 1st Author's Name | Takumi Yamaguchi |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Kyosuke Ariga |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Keito Mori |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 4th Author's Name | Atushi A. Yamaguchi |
| 4th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| Date | 2020-11-26 |
| Paper # | ED2020-2,CPM2020-23,LQE2020-53 |
| Volume (vol) | vol.120 |
| Number (no) | ED-254,CPM-255,LQE-256 |
| Page | pp.pp.5-8(ED), pp.5-8(CPM), pp.5-8(LQE), |
| #Pages | 4 |
| Date of Issue | 2020-11-19 (ED, CPM, LQE) |