Presentation 2020-11-26
Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method
Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In our previous reports, we proposed photoacoustic (PA) and photoluminescence (PL) simultaneous measurements as a method to accurately estimate the internal quantum efficiency (IQE) in InGaN quantum wells (QWs). To check the accuracy of the measurement, it is necessary to estimate the effects of factors that may lead to uncertainty, such as reabsorption of QW emission and absorption of excitation light in the GaN substrate. In this study, we have measured IQE and external quantum efficiency (EQE) values by the PA / PL method and the integrating sphere method, respectively, for various InGaN-QW samples on a GaN substrate or a sapphire substrate, and the estimated two values have been compared. It is found, in the measurements, that the excitation light absorption in the GaN substrate affects the PA signal in QWs on GaN substrates, and we have corrected the data by considering the effects. Comparing the estimated IQE and EQE values, the IQE values are larger than the EQE values for all the samples, and the light extraction efficiency obtained from the ratio of IQE and EQE is correlated with the morphology of the sample surface. From these results, it is suggested that accurate IQE values is estimated by this method.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN quantum well / radiative recombination / non-radiative recombination / internal quantum efficiency / photoacoustic
Paper # ED2020-1,CPM2020-22,LQE2020-52
Date of Issue 2020-11-19 (ED, CPM, LQE)

Conference Information
Committee LQE / CPM / ED
Conference Date 2020/11/26(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Hiroshi Yasaka(Tohoku Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Michihiko Suhara(TMU)
Vice Chair Toshitada Umezawa(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Hiroki Fujishiro(Tokyo Univ. of Science)
Secretary Toshitada Umezawa(Osaka Univ.) / Yuichi Nakamura(NTT) / Hiroki Fujishiro(Hirosaki Univ.)
Assistant Kazuue Fujita(Hamamatsu) / Nobuhiko Nishiyama(Tokyo Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Takuya Tsutsumi(NTT)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Component Parts and Materials / Technical Committee on Electron Devices
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method
Sub Title (in English)
Keyword(1) InGaN quantum well
Keyword(2) radiative recombination
Keyword(3) non-radiative recombination
Keyword(4) internal quantum efficiency
Keyword(5) photoacoustic
1st Author's Name Keito Mori
1st Author's Affiliation Kanazawa Institute of Technology(KIT)
2nd Author's Name Yuchi Takahashi
2nd Author's Affiliation Kanazawa Institute of Technology(KIT)
3rd Author's Name Shigeta Sakai
3rd Author's Affiliation Kanazawa Institute of Technology(KIT)
4th Author's Name Yuya Morimoto
4th Author's Affiliation Kanazawa Institute of Technology(KIT)
5th Author's Name Atsushi A. Yamaguchi
5th Author's Affiliation Kanazawa Institute of Technology(KIT)
6th Author's Name Susumu Kusanagi
6th Author's Affiliation Sony Corporation(Sony)
7th Author's Name Yuya Kanitani
7th Author's Affiliation Sony Corporation(Sony)
8th Author's Name Yoshihiro Kudo
8th Author's Affiliation Sony Corporation(Sony)
9th Author's Name Shigetaka Tomiya
9th Author's Affiliation Sony Corporation(Sony)
Date 2020-11-26
Paper # ED2020-1,CPM2020-22,LQE2020-52
Volume (vol) vol.120
Number (no) ED-254,CPM-255,LQE-256
Page pp.pp.1-4(ED), pp.1-4(CPM), pp.1-4(LQE),
#Pages 4
Date of Issue 2020-11-19 (ED, CPM, LQE)