| Presentation | 2020-10-07 Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As a device for wireless power transmission, we are developing a new rectenna that uses a gated anode diode (GAD) that short-circuits the gate electrode and ohmic electrode of a normally-off type GaN HEMT. In this study, a wide recess gate type GaN GAD was prepared and the recess length dependence of its electrical characteristics was investigated. Typical DC characteristics of the HEMT are a threshold voltage Vth of +0.3 V and a maximum drain current Imax = 300 mA / mm. The GAD using this HEMT showed the characteristics of forward current If = 350 mA / mm and reverse breakdown voltage BVr = 40 V. When the performance of the bridge type rectifier at 5.8 GHz was predicted using the SPICE model extracted from this device, good characteristics with a rectifier efficiency of 81% and a DC output of 10 W were obtained with a GAD with a gate width of 0.8 mm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN HEMT / Diode / Rectenna / Wireless power transmission |
| Paper # | WPT2020-19 |
| Date of Issue | 2020-09-30 (WPT) |
| Conference Information | |
| Committee | WPT / EE |
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| Conference Date | 2020/10/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Toshio Ishizaki(Ryukoku Univ.) / Tadashi Suetsugu(Fukuoka Univ.) |
| Vice Chair | / Hiroo Sekiya(Chiba Univ.) / Keiichi Hirose(NTT Facilities) |
| Secretary | (Nagasaki Univ.) / Hiroo Sekiya(Okayama Univ.) / Keiichi Hirose(Sojo Univ.) |
| Assistant | Osamu Kagaya(AGC) / Yoshiaki Narusue(Univ. of Tokyo) / Yuu Yonezawa(FUJITSU Advanced Technologies) / Yudai Furukawa(Fukuoka Univ.) / Kazufumi Yuasa(NTT Facilities) |
| Paper Information | |
| Registration To | Technical Committee on Wireless Power Transfer / Technical Committee on Energy Engineering in Electronics and Communications |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics of Gated-Anode Diode for Rectenna Using Normally-Off GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | Diode |
| Keyword(3) | Rectenna |
| Keyword(4) | Wireless power transmission |
| 1st Author's Name | Hidemasa Takahashi |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Yuji Ando |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Yoichi Tsuchiya |
| 3rd Author's Affiliation | Nagoya Institute of Technology(NITECH) |
| 4th Author's Name | Akio Wakejima |
| 4th Author's Affiliation | Nagoya Institute of Technology(NITECH) |
| 5th Author's Name | Hiroaki Hayashi |
| 5th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 6th Author's Name | Eiji Yagyu |
| 6th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 7th Author's Name | Koichi Kikkawa |
| 7th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Institute of Tech) |
| 8th Author's Name | Naoki Sakai |
| 8th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Institute of Tech) |
| 9th Author's Name | Kenji Itoh |
| 9th Author's Affiliation | Kanazawa Institute of Technology(Kanazawa Institute of Tech) |
| 10th Author's Name | Jun Suda |
| 10th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2020-10-07 |
| Paper # | WPT2020-19 |
| Volume (vol) | vol.120 |
| Number (no) | WPT-182 |
| Page | pp.pp.1-5(WPT), |
| #Pages | 5 |
| Date of Issue | 2020-09-30 (WPT) |