Presentation 2020-10-22
Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications
Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2020-16
Date of Issue 2020-10-15 (SDM)

Conference Information
Committee SDM
Conference Date 2020/10/22(1days)
Place (in Japanese) (See Japanese page)
Place (in English) virtual conference
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Hiroshige Hirano(TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi(Tokyo Inst. of Tech.)
Secretary Shunichiro Ohmi(AIST)
Assistant Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of N-doped LaB6/LaBxNy/Si(100) MIS structure and floating-gate memory applications
Sub Title (in English)
Keyword(1)
1st Author's Name Kyung Eun Park
1st Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
2nd Author's Name Hideki Kamata
2nd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
3rd Author's Name Shun-ichiro Ohmi
3rd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech)
Date 2020-10-22
Paper # SDM2020-16
Volume (vol) vol.120
Number (no) SDM-205
Page pp.pp.12-15(SDM),
#Pages 4
Date of Issue 2020-10-15 (SDM)