Presentation 2020-10-05
Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films
Soki Urashita, Hayato Onozawa, Ryota Kitagawa, Masato Tomita, Takashi Harumoto, Ji Shi, Yoshio Nakamura, Yota Takamura, Shigeki Nakagawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In magnetic tunnel junctions (MTJs) for magnetoresistive random access memory, a trade-off relationship between the critical current density for magnetization reversal and the thermal stability of the free layer exist. To overcome this tradeoff relationship, we have proposed a piezo-electronic magnetic tunnel junctions (PE-MTJ) consisting of a MTJ using a SmFe2 free layer with negative giant magnetostriction and a pressurized structure composed of a piezoelectric material and metal electrode. In this report, we discuss potential issues in device processing to fabricate MTJ using SmFe2 thin film and report the experimental results of fabricated MTJs. According to magnetic properties for the piler with various diameter, the side of SmFe2 pilers slightly got oxidized by exposure to the air after etching process. The MTJs showed parallel/anti-parallel magnetic configuration and tunneling transport behavior.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Magnetostriction / Inverse magnetostriction effect / Magnetoresistive random access memory / MRAM
Paper # MRIS2020-3
Date of Issue 2020-09-28 (MRIS)

Conference Information
Committee MRIS / ITE-MMS
Conference Date 2020/10/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Recording Head, Spintronics, Solid State Memory, Media, etc.
Chair Shuhei Yoshida(Kinki Univ.) / Kenji Machida(NHK)
Vice Chair
Secretary (Tohoku Inst. of Tech.) / (AIST)
Assistant Yasuaki Nakamura(Ehime Univ.) / Yoshiyuki Hirayama(Samsung)

Paper Information
Registration To Technical Committee on Magnetic Recording & Information Storage / Technical Group on Multi-media Storage
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films
Sub Title (in English)
Keyword(1) Magnetostriction
Keyword(2) Inverse magnetostriction effect
Keyword(3) Magnetoresistive random access memory
Keyword(4) MRAM
1st Author's Name Soki Urashita
1st Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
2nd Author's Name Hayato Onozawa
2nd Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
3rd Author's Name Ryota Kitagawa
3rd Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
4th Author's Name Masato Tomita
4th Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
5th Author's Name Takashi Harumoto
5th Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
6th Author's Name Ji Shi
6th Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
7th Author's Name Yoshio Nakamura
7th Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
8th Author's Name Yota Takamura
8th Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
9th Author's Name Shigeki Nakagawa
9th Author's Affiliation Tokyo Institute of technology(Tokyo Tech.)
Date 2020-10-05
Paper # MRIS2020-3
Volume (vol) vol.120
Number (no) MRIS-180
Page pp.pp.12-15(MRIS),
#Pages 4
Date of Issue 2020-09-28 (MRIS)