Presentation | 2020-10-05 Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films Soki Urashita, Hayato Onozawa, Ryota Kitagawa, Masato Tomita, Takashi Harumoto, Ji Shi, Yoshio Nakamura, Yota Takamura, Shigeki Nakagawa, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In magnetic tunnel junctions (MTJs) for magnetoresistive random access memory, a trade-off relationship between the critical current density for magnetization reversal and the thermal stability of the free layer exist. To overcome this tradeoff relationship, we have proposed a piezo-electronic magnetic tunnel junctions (PE-MTJ) consisting of a MTJ using a SmFe2 free layer with negative giant magnetostriction and a pressurized structure composed of a piezoelectric material and metal electrode. In this report, we discuss potential issues in device processing to fabricate MTJ using SmFe2 thin film and report the experimental results of fabricated MTJs. According to magnetic properties for the piler with various diameter, the side of SmFe2 pilers slightly got oxidized by exposure to the air after etching process. The MTJs showed parallel/anti-parallel magnetic configuration and tunneling transport behavior. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Magnetostriction / Inverse magnetostriction effect / Magnetoresistive random access memory / MRAM |
Paper # | MRIS2020-3 |
Date of Issue | 2020-09-28 (MRIS) |
Conference Information | |
Committee | MRIS / ITE-MMS |
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Conference Date | 2020/10/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Online |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Recording Head, Spintronics, Solid State Memory, Media, etc. |
Chair | Shuhei Yoshida(Kinki Univ.) / Kenji Machida(NHK) |
Vice Chair | |
Secretary | (Tohoku Inst. of Tech.) / (AIST) |
Assistant | Yasuaki Nakamura(Ehime Univ.) / Yoshiyuki Hirayama(Samsung) |
Paper Information | |
Registration To | Technical Committee on Magnetic Recording & Information Storage / Technical Group on Multi-media Storage |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Recent progress on piezo-electronic magnetoresistive devices using giant magnetostrictive SmFe2 thin films |
Sub Title (in English) | |
Keyword(1) | Magnetostriction |
Keyword(2) | Inverse magnetostriction effect |
Keyword(3) | Magnetoresistive random access memory |
Keyword(4) | MRAM |
1st Author's Name | Soki Urashita |
1st Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
2nd Author's Name | Hayato Onozawa |
2nd Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
3rd Author's Name | Ryota Kitagawa |
3rd Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
4th Author's Name | Masato Tomita |
4th Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
5th Author's Name | Takashi Harumoto |
5th Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
6th Author's Name | Ji Shi |
6th Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
7th Author's Name | Yoshio Nakamura |
7th Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
8th Author's Name | Yota Takamura |
8th Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
9th Author's Name | Shigeki Nakagawa |
9th Author's Affiliation | Tokyo Institute of technology(Tokyo Tech.) |
Date | 2020-10-05 |
Paper # | MRIS2020-3 |
Volume (vol) | vol.120 |
Number (no) | MRIS-180 |
Page | pp.pp.12-15(MRIS), |
#Pages | 4 |
Date of Issue | 2020-09-28 (MRIS) |