| Presentation | 2020-08-07 [Invited Talk] Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Si quantum computer has attracted a significant attention due to its potential for large-scale integration using semiconductor manufacturing technology. In order to develop the Si quantum computer, it is necessary to improve the coherence-time of Si spin qubit. The coherence-time of Si spin qubit is limited by charge noise. However, the origin of charge noise generated at cryogenic temperature, which is the operating temperature of Si spin qubit, has not been clarified. This paper reviews the technological challenges of Si spin qubit in terms of noise and reports our recent results to reveal the origin of cryogenic noise that limits the performance of Si quantum computer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si quantum computer / Spin qubit / Cryogenic temperature / Low-frequency noise / Cryo-CMOS |
| Paper # | SDM2020-6,ICD2020-6 |
| Date of Issue | 2020-07-30 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
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| Conference Date | 2020/8/6(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Makoto Nagata(Kobe Univ.) / Hiroshige Hirano(TowerJazz Panasonic) / Junichi Akita(Kanazawa Univ.) |
| Vice Chair | Masafumi Takahashi(Toshiba-memory) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
| Secretary | Masafumi Takahashi(Socionext) / Shunichiro Ohmi(Osaka Univ.) / 池辺 将之(AIST) / 廣瀬 裕(Nihon Univ.) |
| Assistant | Koji Nii(Floadia) / Kosuke Miyaji(Shinshu Univ.) / Takeshi Kuboki(Kyushu Univ.) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / 小室 孝(埼玉大) / 下ノ村 和弘(立命館大) / 香川 景一郞(静岡大) / 徳田 崇(東工大) / 黒田 理人(東北大) / 船津 良平(NHK) / 山下 雄一郎(TSMC) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit |
| Sub Title (in English) | |
| Keyword(1) | Si quantum computer |
| Keyword(2) | Spin qubit |
| Keyword(3) | Cryogenic temperature |
| Keyword(4) | Low-frequency noise |
| Keyword(5) | Cryo-CMOS |
| 1st Author's Name | Hiroshi Oka |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Takashi Matsukawa |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Kimihiko Kato |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Shota Iizuka |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Wataru Mizubayashi |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Kazuhiko Endo |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 7th Author's Name | Tetsuji Yasuda |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 8th Author's Name | Takahiro Mori |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2020-08-07 |
| Paper # | SDM2020-6,ICD2020-6 |
| Volume (vol) | vol.120 |
| Number (no) | SDM-126,ICD-127 |
| Page | pp.pp.25-30(SDM), pp.25-30(ICD), |
| #Pages | 6 |
| Date of Issue | 2020-07-30 (SDM, ICD) |