| Presentation | 2020-08-06 [Invited Talk] Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conventional MOSFETs that the device operation is determined by the complicated interaction between ferroelectric polarization/inversion charges/trapped charges at the ferroelectric/semiconductor interface. In this report, we summarize our finding on the interaction between polarization and charges extracted from P-V and quasi-static split C-V measurements, proposed by our group, together with Hall measurements, and discuss the origin of complicated device operation and asymmetric memory characteristics of ferroelectric FETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric FET / Device operation mechanism / Inversion charge / Quasi-static split C-V / Polarization-voltage characteristics |
| Paper # | SDM2020-2,ICD2020-2 |
| Date of Issue | 2020-07-30 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
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| Conference Date | 2020/8/6(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Makoto Nagata(Kobe Univ.) / Hiroshige Hirano(TowerJazz Panasonic) / Junichi Akita(Kanazawa Univ.) |
| Vice Chair | Masafumi Takahashi(Toshiba-memory) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
| Secretary | Masafumi Takahashi(Socionext) / Shunichiro Ohmi(Osaka Univ.) / 池辺 将之(AIST) / 廣瀬 裕(Nihon Univ.) |
| Assistant | Koji Nii(Floadia) / Kosuke Miyaji(Shinshu Univ.) / Takeshi Kuboki(Kyushu Univ.) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / 小室 孝(埼玉大) / 下ノ村 和弘(立命館大) / 香川 景一郞(静岡大) / 徳田 崇(東工大) / 黒田 理人(東北大) / 船津 良平(NHK) / 山下 雄一郎(TSMC) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric FET |
| Keyword(2) | Device operation mechanism |
| Keyword(3) | Inversion charge |
| Keyword(4) | Quasi-static split C-V |
| Keyword(5) | Polarization-voltage characteristics |
| 1st Author's Name | Kasidit Toprasertpong |
| 1st Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 2nd Author's Name | Zaoyang Lin |
| 2nd Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 3rd Author's Name | Tsung-En Lee |
| 3rd Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 4th Author's Name | Mitsuru Takenaka |
| 4th Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| 5th Author's Name | Shinichi Takagi |
| 5th Author's Affiliation | The University of Tokyo(Univ. Tokyo) |
| Date | 2020-08-06 |
| Paper # | SDM2020-2,ICD2020-2 |
| Volume (vol) | vol.120 |
| Number (no) | SDM-126,ICD-127 |
| Page | pp.pp.3-7(SDM), pp.3-7(ICD), |
| #Pages | 5 |
| Date of Issue | 2020-07-30 (SDM, ICD) |