Presentation | 2020-08-06 Over-the-top Si Interposer Embedding Backside Buried Metal to Reduce Power Supply Impedance Takuji Miki, Makoto Nagata, Akihiro Tsukioka, Noriyuki Miura, Takaaki Okidono, Yuuki Araga, Naoya Watanabe, Haruo Shimamoto, Katsuya Kikuchi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 2.5D structure with a Si interposer stacked on a CMOS chip is developed to reduce power supply impedance. A backside buried metal (BBM) in Si interposer provides low resistive wiring of power / ground nodes and also forms a large parasitic bypass capacitance between power and ground patterns, which drastically suppresses the power supply noise. The Si interposer was implemented over a cryptographic chip with a large scale digital circuit fabricated in 130 nm CMOS. The measured resistance values of power and ground line were reduced by 30% and 56%, respectively, and the measured bypass capacitance was increased by 2.4 nF, owing to the additional low resistive wiring in parallel and a large parasitic capacitance of the Si interposer and the stacking structure itself. An internal noise monitoring circuit embedded in the CMOS chip indicates that the proposed over-the-top Si interposer reduces a peak-to-peak power supply noise and DC drop during cryptographic operation to less than 50%. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 2.5D implementation / Si interposer / Power supply impedance / Cryptographic circuit |
Paper # | SDM2020-5,ICD2020-5 |
Date of Issue | 2020-07-30 (SDM, ICD) |
Conference Information | |
Committee | ICD / SDM / ITE-IST |
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Conference Date | 2020/8/6(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Online |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
Chair | Makoto Nagata(Kobe Univ.) / Hiroshige Hirano(TowerJazz Panasonic) / Junichi Akita(Kanazawa Univ.) |
Vice Chair | Masafumi Takahashi(Toshiba-memory) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
Secretary | Masafumi Takahashi(Socionext) / Shunichiro Ohmi(Osaka Univ.) / 池辺 将之(AIST) / 廣瀬 裕(Nihon Univ.) |
Assistant | Koji Nii(Floadia) / Kosuke Miyaji(Shinshu Univ.) / Takeshi Kuboki(Kyushu Univ.) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / 小室 孝(埼玉大) / 下ノ村 和弘(立命館大) / 香川 景一郞(静岡大) / 徳田 崇(東工大) / 黒田 理人(東北大) / 船津 良平(NHK) / 山下 雄一郎(TSMC) |
Paper Information | |
Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Over-the-top Si Interposer Embedding Backside Buried Metal to Reduce Power Supply Impedance |
Sub Title (in English) | |
Keyword(1) | 2.5D implementation |
Keyword(2) | Si interposer |
Keyword(3) | Power supply impedance |
Keyword(4) | Cryptographic circuit |
1st Author's Name | Takuji Miki |
1st Author's Affiliation | Kobe University(Kobe Univ.) |
2nd Author's Name | Makoto Nagata |
2nd Author's Affiliation | Kobe University(Kobe Univ.) |
3rd Author's Name | Akihiro Tsukioka |
3rd Author's Affiliation | Kobe University(Kobe Univ.) |
4th Author's Name | Noriyuki Miura |
4th Author's Affiliation | Osaka University(Osaka Univ.) |
5th Author's Name | Takaaki Okidono |
5th Author's Affiliation | ECSEC(ECSEC) |
6th Author's Name | Yuuki Araga |
6th Author's Affiliation | AIST(AIST) |
7th Author's Name | Naoya Watanabe |
7th Author's Affiliation | AIST(AIST) |
8th Author's Name | Haruo Shimamoto |
8th Author's Affiliation | AIST(AIST) |
9th Author's Name | Katsuya Kikuchi |
9th Author's Affiliation | AIST(AIST) |
Date | 2020-08-06 |
Paper # | SDM2020-5,ICD2020-5 |
Volume (vol) | vol.120 |
Number (no) | SDM-126,ICD-127 |
Page | pp.pp.19-24(SDM), pp.19-24(ICD), |
#Pages | 6 |
Date of Issue | 2020-07-30 (SDM, ICD) |