Presentation 2020-08-07
CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Shota Ishiguro, Jiro Ida, Takayuki Mori, Koichiro Ishibashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our laboratory. So far, we have reported that NMOS and PMOS have Steep SS in each of them. In this paper, we report the characterization of a CMOS inverter that combines NMOS and PMOS, for the first time. When the SS positions are superimposed, they are very steep and perpendicular, compared with the conventional SOI-CMOS case. The results show that the transfer characteristics of the PNBT-SOI FETs are very good. This is an interesting result confirmed by the PNBT-SOI FETs because they have an ideal steep SS. A large voltage gain of about 78 dB was found with an input voltage step 100?v.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CMOS Inverter / SOI / Steep Subthreshold Slope
Paper # SDM2020-8,ICD2020-8
Date of Issue 2020-07-30 (SDM, ICD)

Conference Information
Committee ICD / SDM / ITE-IST
Conference Date 2020/8/6(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Online
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
Chair Makoto Nagata(Kobe Univ.) / Hiroshige Hirano(TowerJazz Panasonic) / Junichi Akita(Kanazawa Univ.)
Vice Chair Masafumi Takahashi(Toshiba-memory) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 池辺 将之(北大) / 廣瀬 裕(パナソニック)
Secretary Masafumi Takahashi(Socionext) / Shunichiro Ohmi(Osaka Univ.) / 池辺 将之(AIST) / 廣瀬 裕(Nihon Univ.)
Assistant Koji Nii(Floadia) / Kosuke Miyaji(Shinshu Univ.) / Takeshi Kuboki(Kyushu Univ.) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / 小室 孝(埼玉大) / 下ノ村 和弘(立命館大) / 香川 景一郞(静岡大) / 徳田 崇(東工大) / 黒田 理人(東北大) / 船津 良平(NHK) / 山下 雄一郎(TSMC)

Paper Information
Registration To Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Sub Title (in English)
Keyword(1) CMOS Inverter
Keyword(2) SOI
Keyword(3) Steep Subthreshold Slope
1st Author's Name Shota Ishiguro
1st Author's Affiliation Kanazawa Institute of Technology(KIT)
2nd Author's Name Jiro Ida
2nd Author's Affiliation Kanazawa Institute of Technology(KIT)
3rd Author's Name Takayuki Mori
3rd Author's Affiliation Kanazawa Institute of Technology(KIT)
4th Author's Name Koichiro Ishibashi
4th Author's Affiliation The University of Electro-Communications(UEC)
Date 2020-08-07
Paper # SDM2020-8,ICD2020-8
Volume (vol) vol.120
Number (no) SDM-126,ICD-127
Page pp.pp.37-40(SDM), pp.37-40(ICD),
#Pages 4
Date of Issue 2020-07-30 (SDM, ICD)