| Presentation | 2020-08-07 CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” Shota Ishiguro, Jiro Ida, Takayuki Mori, Koichiro Ishibashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we report the CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” proposed in our laboratory. So far, we have reported that NMOS and PMOS have Steep SS in each of them. In this paper, we report the characterization of a CMOS inverter that combines NMOS and PMOS, for the first time. When the SS positions are superimposed, they are very steep and perpendicular, compared with the conventional SOI-CMOS case. The results show that the transfer characteristics of the PNBT-SOI FETs are very good. This is an interesting result confirmed by the PNBT-SOI FETs because they have an ideal steep SS. A large voltage gain of about 78 dB was found with an input voltage step 100?v. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CMOS Inverter / SOI / Steep Subthreshold Slope |
| Paper # | SDM2020-8,ICD2020-8 |
| Date of Issue | 2020-07-30 (SDM, ICD) |
| Conference Information | |
| Committee | ICD / SDM / ITE-IST |
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| Conference Date | 2020/8/6(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Makoto Nagata(Kobe Univ.) / Hiroshige Hirano(TowerJazz Panasonic) / Junichi Akita(Kanazawa Univ.) |
| Vice Chair | Masafumi Takahashi(Toshiba-memory) / Shunichiro Ohmi(Tokyo Inst. of Tech.) / 池辺 将之(北大) / 廣瀬 裕(パナソニック) |
| Secretary | Masafumi Takahashi(Socionext) / Shunichiro Ohmi(Osaka Univ.) / 池辺 将之(AIST) / 廣瀬 裕(Nihon Univ.) |
| Assistant | Koji Nii(Floadia) / Kosuke Miyaji(Shinshu Univ.) / Takeshi Kuboki(Kyushu Univ.) / Taiji Noda(Panasonic) / Tomoyuki Suwa(Tohoku Univ.) / 小室 孝(埼玉大) / 下ノ村 和弘(立命館大) / 香川 景一郞(静岡大) / 徳田 崇(東工大) / 黒田 理人(東北大) / 船津 良平(NHK) / 山下 雄一郎(TSMC) |
| Paper Information | |
| Registration To | Technical Committee on Integrated Circuits and Devices / Technical Committee on Silicon Device and Materials / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET” |
| Sub Title (in English) | |
| Keyword(1) | CMOS Inverter |
| Keyword(2) | SOI |
| Keyword(3) | Steep Subthreshold Slope |
| 1st Author's Name | Shota Ishiguro |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Jiro Ida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Takayuki Mori |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 4th Author's Name | Koichiro Ishibashi |
| 4th Author's Affiliation | The University of Electro-Communications(UEC) |
| Date | 2020-08-07 |
| Paper # | SDM2020-8,ICD2020-8 |
| Volume (vol) | vol.120 |
| Number (no) | SDM-126,ICD-127 |
| Page | pp.pp.37-40(SDM), pp.37-40(ICD), |
| #Pages | 4 |
| Date of Issue | 2020-07-30 (SDM, ICD) |