| Presentation | 2020-06-18 A Study on AM-AM/PM Characteristics of RF Power Amplifiers Satoshi Tanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In 5G (5th Generation) mobile phone, maximum modulation bandwidth is enlarged from 100 to 400 MHz addition, complicated systems such as DC (Dual Connectivity) and MIMO (Multiple-Input and Multiple-Output) are applied. With this wide bandwidth and complicated parallel operating systems, the ET (Envelope Tracking) systems and the DPD (Digital Pre-Distortion) systems cannot be always the optimum solutions. The PA (Power Amplifier) for a 5G mobile phone should achieve good linearity with standalone operation. In this paper, AM (Amplitude Modulation)-AM/PM (Phase Modulation) characteristics of a single-stage PA of HBT (Heterojunction Bipolar Transistor) is analyzed. A single-stage PA was assigned a linear equivalent circuit for each output power level, and the element values were expressed in a model that varies with output power. The change in AM-AM/PM characteristics when the signal source impedance and load impedance were changed using this model were calculated. As a result, it was found that there is a region where AM-AM/PM distortion can be reduced when the reactance of the signal source impedance is positive, and the reactance of the load impedance is negative. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Mobile phone / Power amplifier / Heterojunction bipolar transistor / Non-linear / LTE / 5G / Load Pull / Source Pull |
| Paper # | CAS2020-3,VLD2020-3,SIP2020-19,MSS2020-3 |
| Date of Issue | 2020-06-11 (CAS, VLD, SIP, MSS) |
| Conference Information | |
| Committee | MSS / CAS / SIP / VLD |
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| Conference Date | 2020/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online Meetig |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Shigemasa Takai(Osaka Univ.) / Yasuhiro Takashima(Univ. of Kitakyushu) / Naoyuki Aikawa(TUS) / Daisuke Fukuda(Fujitsu Labs.) |
| Vice Chair | Atsuo Ozaki(Osaka Inst. of Tech.) / Hiroki Sato(Sony LSI Design) / Kazunori Hayashi(Osaka City Univ) / Yukihiro Bandou(NTT) / Kazutoshi Kobayashi(Kyoto Inst. of Tech.) |
| Secretary | Atsuo Ozaki(Setsunan Univ.) / Hiroki Sato(Hokkaido Univ.) / Kazunori Hayashi(Yamanashi Univ.) / Yukihiro Bandou(Sony LSI Design) / Kazutoshi Kobayashi(Hiroshima Univ.) |
| Assistant | Naoki Hayashi(Osaka Univ.) / Motoi Yamaguchi(TECHNOPRO) / Yohei Nakamura(Hitachi) / Kenjiro Sugimoto(Waseda Univ.) / Kazuki Ikeda(Hitachi) |
| Paper Information | |
| Registration To | Technical Committee on Mathematical Systems Science and its applications / Technical Committee on Circuits and Systems / Technical Committee on Signal Processing / Technical Committee on VLSI Design Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Study on AM-AM/PM Characteristics of RF Power Amplifiers |
| Sub Title (in English) | |
| Keyword(1) | Mobile phone |
| Keyword(2) | Power amplifier |
| Keyword(3) | Heterojunction bipolar transistor |
| Keyword(4) | Non-linear |
| Keyword(5) | LTE |
| Keyword(6) | 5G |
| Keyword(7) | Load Pull |
| Keyword(8) | Source Pull |
| 1st Author's Name | Satoshi Tanaka |
| 1st Author's Affiliation | Murata Manufacturing Co., Ltd.(Murata Manufacturing) |
| Date | 2020-06-18 |
| Paper # | CAS2020-3,VLD2020-3,SIP2020-19,MSS2020-3 |
| Volume (vol) | vol.120 |
| Number (no) | CAS-65,VLD-66,SIP-67,MSS-68 |
| Page | pp.pp.11-16(CAS), pp.11-16(VLD), pp.11-16(SIP), pp.11-16(MSS), |
| #Pages | 6 |
| Date of Issue | 2020-06-11 (CAS, VLD, SIP, MSS) |