| Presentation | 2020-05-28 [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasing traffic demands. InP-based Sub-millimeter-wave monolithic ICs (SMMICs) have attracted much attention for applying Beyond 5G because InP-based high electron mobility transistors (InP-HEMTs) feature superior RF characteristics. This paper briefly reviews fundamental physical demands and reports InP-HEMTs and wafer-level backside process technology. We also show a world-record-class 120-Gb/s wireless transmission with the distance of 9.8 m by using InP-HEMT-SMMIC modules with 300-GHz band. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Beyond 5G / Sub-millimeter-wave monolithic ICs / Indium phosphide / High electron mobility transistors / Wafer-level backside process / backside lines |
| Paper # | MWP2020-1 |
| Date of Issue | 2020-05-21 (MWP) |
| Conference Information | |
| Committee | MWP |
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| Conference Date | 2020/5/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Naoto Yoshimoto(Chitose Inst. of Science and Tech.) |
| Vice Chair | Akihiko Hirata(Chiba Inst. of Tech.) |
| Secretary | Akihiko Hirata(Yazaki) |
| Assistant | Kensuke Ikeda(CRIEPI) / Li Yi(Osaka Univ.) / Takashi Yamada(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Microwave and Millimeter-wave Photonics |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application |
| Sub Title (in English) | |
| Keyword(1) | Beyond 5G |
| Keyword(2) | Sub-millimeter-wave monolithic ICs |
| Keyword(3) | Indium phosphide |
| Keyword(4) | High electron mobility transistors |
| Keyword(5) | Wafer-level backside process |
| Keyword(6) | backside lines |
| 1st Author's Name | Takuya Tsutsumi |
| 1st Author's Affiliation | NTT Corporation(NTT) |
| 2nd Author's Name | Hiroki Sugiyama |
| 2nd Author's Affiliation | NTT Corporation(NTT) |
| 3rd Author's Name | Hiroshi Hamada |
| 3rd Author's Affiliation | NTT Corporation(NTT) |
| 4th Author's Name | Hideyuki Nosaka |
| 4th Author's Affiliation | NTT Corporation(NTT) |
| 5th Author's Name | Hideaki Matsuzaki |
| 5th Author's Affiliation | NTT Corporation(NTT) |
| Date | 2020-05-28 |
| Paper # | MWP2020-1 |
| Volume (vol) | vol.120 |
| Number (no) | MWP-44 |
| Page | pp.pp.1-6(MWP), |
| #Pages | 6 |
| Date of Issue | 2020-05-21 (MWP) |