Presentation 2020-03-04
Gate Sizing for Programmable Delay Elements on Post-Silicon Delay Tuning
Kota Muroi, Yukihide Kohira,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Due to progressing process technology, yield of chips is reduced by timing violation caused by delay variation of gates and wires in fabrication. Recently, post-silicon delay tuning, which inserts programmable delay elements (PDEs) into clock tree before the fabrication and sets the delays of the PDEs to recover the timing violation after the fabrication, is promising to improve the yield. In an existing design flow, since fanout of PDE is not taken into consideration, the cell with the highest drive ability and the highest power consumption is assigned into the gate in the last level of each PDE. Therefore, the area of the circuit obtained by the existing method is large, and the power consumption is high. In this paper, we propose a gate sizing method of PDEs considering fanout. The proposed method determines an initial gate size for each gate according to its fanout and adapts the modification of gate size based on delay analysis. The proposed method assigns the cell with appropriate drive ability into each gate. Experiments show reduction of circuit area and power consumption, and improvement of yield.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Post-silicon delay tuning / yield improvement / power reduction / Programmable Delay Element (PDE) / gate sizing
Paper # VLD2019-103,HWS2019-76
Date of Issue 2020-02-26 (VLD, HWS)

Conference Information
Committee HWS / VLD
Conference Date 2020/3/4(4days)
Place (in Japanese) (See Japanese page)
Place (in English) Okinawa Ken Seinen Kaikan
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Technology for System-on-Silicon, Hardware Security, etc.
Chair Shinichi Kawamura(Toshiba) / Nozomu Togawa(Waseda Univ.)
Vice Chair Makoto Ikeda(Univ. of Tokyo) / Yasuhisa Shimazaki(Renesas Electronics) / Daisuke Fukuda(Fujitsu Labs.)
Secretary Makoto Ikeda(SECOM) / Yasuhisa Shimazaki(Kyushu Univ.) / Daisuke Fukuda(Univ. of Aizu)
Assistant / Kazuki Ikeda(Hitachi)

Paper Information
Registration To Technical Committee on Hardware Security / Technical Committee on VLSI Design Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Gate Sizing for Programmable Delay Elements on Post-Silicon Delay Tuning
Sub Title (in English)
Keyword(1) Post-silicon delay tuning
Keyword(2) yield improvement
Keyword(3) power reduction
Keyword(4) Programmable Delay Element (PDE)
Keyword(5) gate sizing
1st Author's Name Kota Muroi
1st Author's Affiliation The University of Aizu(UoA)
2nd Author's Name Yukihide Kohira
2nd Author's Affiliation The University of Aizu(UoA)
Date 2020-03-04
Paper # VLD2019-103,HWS2019-76
Volume (vol) vol.119
Number (no) VLD-443,HWS-444
Page pp.pp.53-58(VLD), pp.53-58(HWS),
#Pages 6
Date of Issue 2020-02-26 (VLD, HWS)