Presentation | 2020-03-05 [Memorial Lecture] Workload-aware Data-eviction Self-adjusting System of Multi-SCM Storage to Resolve Trade-off between SCM Data-retention Error and Storage System Performance Reika Kinoshita, Chihiro Matsui, Atsuya Suzuki, Shouhei Fukuyama, Ken Takeuchi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Storage Class Memories (SCMs) are used as non-volatile (NV) cache memory as well as storage. Multi-SCM storage with two types of SCMs, M-SCM (fast but small capacity memory-type SCM) and S-SCM (slow but large capacity storage-type SCM), has been proposed. In Multi-SCM storage, M-SCM works as NV-cache of S-SCM based storage. M-SCM such as MRAM is fast but may suffer from thermal instabilities and cause data-retention errors at high temperature. Therefore, data in M-SCM should be evicted to S-SCM at short interval before exceeding acceptable data-retention time. However, in case of short interval eviction, frequent data eviction from M-SCM to S-SCM severely degrades the storage system performance. To resolve this trade-off between data-retention reliability and the storage system performance, this paper proposes workload-aware data-eviction self-adjusting system. Proposed system is composed of Access Frequency Monitor (Proposal 1) and Evict Interval Adjustment (Proposal 2). Proposal 1 observes the access frequency of evicted data that directly affects data-retention time of M-SCM. By referring to the results of Proposal 1, Proposal 2 automatically changes the data-eviction interval so that long retention data are moved immediately to S-SCM and the storage system performance can be improved. As a result, maximum data-retention time of M-SCM decreases by 83%, and the storage system performance increases by 5.9 times. Moreover, the acceptable endurance increases by 103 times. Finally, measured data-retention errors and memory cell area decrease by 79% and 5.7%, respectively. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Storage class memory (SCM)ReRAMData-retention errorData eviction |
Paper # | VLD2019-119,HWS2019-92 |
Date of Issue | 2020-02-26 (VLD, HWS) |
Conference Information | |
Committee | HWS / VLD |
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Conference Date | 2020/3/4(4days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Okinawa Ken Seinen Kaikan |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Design Technology for System-on-Silicon, Hardware Security, etc. |
Chair | Shinichi Kawamura(Toshiba) / Nozomu Togawa(Waseda Univ.) |
Vice Chair | Makoto Ikeda(Univ. of Tokyo) / Yasuhisa Shimazaki(Renesas Electronics) / Daisuke Fukuda(Fujitsu Labs.) |
Secretary | Makoto Ikeda(SECOM) / Yasuhisa Shimazaki(Kyushu Univ.) / Daisuke Fukuda(Univ. of Aizu) |
Assistant | / Kazuki Ikeda(Hitachi) |
Paper Information | |
Registration To | Technical Committee on Hardware Security / Technical Committee on VLSI Design Technologies |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Memorial Lecture] Workload-aware Data-eviction Self-adjusting System of Multi-SCM Storage to Resolve Trade-off between SCM Data-retention Error and Storage System Performance |
Sub Title (in English) | |
Keyword(1) | Storage class memory (SCM)ReRAMData-retention errorData eviction |
1st Author's Name | Reika Kinoshita |
1st Author's Affiliation | Chuo University(Chuo Univ.) |
2nd Author's Name | Chihiro Matsui |
2nd Author's Affiliation | Chuo University(Chuo Univ.) |
3rd Author's Name | Atsuya Suzuki |
3rd Author's Affiliation | Chuo University(Chuo Univ.) |
4th Author's Name | Shouhei Fukuyama |
4th Author's Affiliation | Chuo University(Chuo Univ.) |
5th Author's Name | Ken Takeuchi |
5th Author's Affiliation | Chuo University(Chuo Univ.) |
Date | 2020-03-05 |
Paper # | VLD2019-119,HWS2019-92 |
Volume (vol) | vol.119 |
Number (no) | VLD-443,HWS-444 |
Page | pp.pp.145-150(VLD), pp.145-150(HWS), |
#Pages | 6 |
Date of Issue | 2020-02-26 (VLD, HWS) |