Presentation | 2020-02-07 [Invited Talk] Novel Volatile Film for Precise Dual Damascene Fabrication Makoto Fujikawa, Tatsuya Yamaguchi, Yuki Kikuchi, Kaoru Maekawa, Hiroaki Kawasaki, Yoji Iizuka, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Abstract? Plasma induced damage on porous low-k dielectrics is a critical issue to lower the interconnect RC delay in the latest and upcoming highly dense integrated circuits. In order to reduce the exposure the low-k material to plasma, a novel volatile material, which can be removed simply by thermal energy is developed [1]-[7]. Utilizing this film as temporary sealing plug, it can protect the low-k dielectrics from being exposed to plasma during upcoming ashing processes, and furthermore. It can be removed easily without additional damage. In this paper, we demonstrate the effect of the volatile material by examining its filling property, electrical characteristics and reliability on the test pattern. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Volatile materialThermal removalPlug materialPorous low-k materialPlasma damageAshing |
Paper # | SDM2019-92 |
Date of Issue | 2020-01-31 (SDM) |
Conference Information | |
Committee | SDM |
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Conference Date | 2020/2/7(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Tokyo University-Hongo |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Takahiro Shinada(Tohoku Univ.) |
Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
Secretary | Hiroshige Hirano(Shizuoka Univ.) |
Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Novel Volatile Film for Precise Dual Damascene Fabrication |
Sub Title (in English) | |
Keyword(1) | Volatile materialThermal removalPlug materialPorous low-k materialPlasma damageAshing |
1st Author's Name | Makoto Fujikawa |
1st Author's Affiliation | Tokyo Electron Technology Solutions Inc.(TTS) |
2nd Author's Name | Tatsuya Yamaguchi |
2nd Author's Affiliation | Tokyo Electron Technology Solutions Inc.(TTS) |
3rd Author's Name | Yuki Kikuchi |
3rd Author's Affiliation | TEL Technology Center America LLC(TTCA) |
4th Author's Name | Kaoru Maekawa |
4th Author's Affiliation | TEL Technology Center America LLC(TTCA) |
5th Author's Name | Hiroaki Kawasaki |
5th Author's Affiliation | Tokyo Electron Limited(TEL) |
6th Author's Name | Yoji Iizuka |
6th Author's Affiliation | Tokyo Electron Limited(TEL) |
Date | 2020-02-07 |
Paper # | SDM2019-92 |
Volume (vol) | vol.119 |
Number (no) | SDM-410 |
Page | pp.pp.21-23(SDM), |
#Pages | 3 |
Date of Issue | 2020-01-31 (SDM) |