Presentation 2020-02-07
[Invited Talk] Novel Volatile Film for Precise Dual Damascene Fabrication
Makoto Fujikawa, Tatsuya Yamaguchi, Yuki Kikuchi, Kaoru Maekawa, Hiroaki Kawasaki, Yoji Iizuka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Abstract? Plasma induced damage on porous low-k dielectrics is a critical issue to lower the interconnect RC delay in the latest and upcoming highly dense integrated circuits. In order to reduce the exposure the low-k material to plasma, a novel volatile material, which can be removed simply by thermal energy is developed [1]-[7]. Utilizing this film as temporary sealing plug, it can protect the low-k dielectrics from being exposed to plasma during upcoming ashing processes, and furthermore. It can be removed easily without additional damage. In this paper, we demonstrate the effect of the volatile material by examining its filling property, electrical characteristics and reliability on the test pattern.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Volatile materialThermal removalPlug materialPorous low-k materialPlasma damageAshing
Paper # SDM2019-92
Date of Issue 2020-01-31 (SDM)

Conference Information
Committee SDM
Conference Date 2020/2/7(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Tokyo University-Hongo
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Novel Volatile Film for Precise Dual Damascene Fabrication
Sub Title (in English)
Keyword(1) Volatile materialThermal removalPlug materialPorous low-k materialPlasma damageAshing
1st Author's Name Makoto Fujikawa
1st Author's Affiliation Tokyo Electron Technology Solutions Inc.(TTS)
2nd Author's Name Tatsuya Yamaguchi
2nd Author's Affiliation Tokyo Electron Technology Solutions Inc.(TTS)
3rd Author's Name Yuki Kikuchi
3rd Author's Affiliation TEL Technology Center America LLC(TTCA)
4th Author's Name Kaoru Maekawa
4th Author's Affiliation TEL Technology Center America LLC(TTCA)
5th Author's Name Hiroaki Kawasaki
5th Author's Affiliation Tokyo Electron Limited(TEL)
6th Author's Name Yoji Iizuka
6th Author's Affiliation Tokyo Electron Limited(TEL)
Date 2020-02-07
Paper # SDM2019-92
Volume (vol) vol.119
Number (no) SDM-410
Page pp.pp.21-23(SDM),
#Pages 3
Date of Issue 2020-01-31 (SDM)