Presentation | 2020-01-31 Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate Nagumo Kenshi, Kimoto Daiki, Suwa Tomoyuki, Teramoto Akinobu, Shirota Riichiro, Tskatani Shinichiro, Kuroda Rihito, Sugawa Shigetoshi, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We report a GaN HEMT (High Electron Mobility Transistor) with floating gate, that has an additional injection gate for charge injection as a structure to achieve normally-off. The introduction of the injection gate not only avoids damage to the gate insulation film at the period of charge injection, which was a problem of conventional HEMT devices with floating gate, but also suppresses threshold voltage-variation by the charge injection. We show the usefulness of this structure by circuit modeling of this new structure and structural design by numerical calculation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / Normally-off / Floating Gate / HEMT / structural design / Injection Gate |
Paper # | ED2019-104,MW2019-138 |
Date of Issue | 2020-01-24 (ED, MW) |
Conference Information | |
Committee | ED / MW |
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Conference Date | 2020/1/31(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
Chair | Michihiko Suhara(TMU) / Yoshinori Kogami(Utsunomiya Univ.) |
Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
Secretary | Hiroki Fujishiro(Saga Univ.) / Tadashi Kawai(Toyama Pref. Univ.) / Kensuke Okubo(Utsunomiya Univ.) / Shintaro Shinjo(Fujitsu Labs.) |
Assistant | Junji Kotani(Fjitsu Lab.) / Takuya Tsutsumi(NTT) / Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
Paper Information | |
Registration To | Technical Committee on Electron Devices / Technical Committee on Microwaves |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | Normally-off |
Keyword(3) | Floating Gate |
Keyword(4) | HEMT |
Keyword(5) | structural design |
Keyword(6) | Injection Gate |
1st Author's Name | Nagumo Kenshi |
1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
2nd Author's Name | Kimoto Daiki |
2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
3rd Author's Name | Suwa Tomoyuki |
3rd Author's Affiliation | Tohoku University(Tohoku Univ.) |
4th Author's Name | Teramoto Akinobu |
4th Author's Affiliation | Hiroshima University(Hiroshima Univ.) |
5th Author's Name | Shirota Riichiro |
5th Author's Affiliation | National Chiao Tung University(NCTU) |
6th Author's Name | Tskatani Shinichiro |
6th Author's Affiliation | National Chiao Tung University(NCTU) |
7th Author's Name | Kuroda Rihito |
7th Author's Affiliation | Tohoku University(Tohoku Univ.) |
8th Author's Name | Sugawa Shigetoshi |
8th Author's Affiliation | Tohoku University(Tohoku Univ.) |
Date | 2020-01-31 |
Paper # | ED2019-104,MW2019-138 |
Volume (vol) | vol.119 |
Number (no) | ED-408,MW-409 |
Page | pp.pp.55-58(ED), pp.55-58(MW), |
#Pages | 4 |
Date of Issue | 2020-01-24 (ED, MW) |