| Presentation | 2020-01-31 Simple Photoelectrochemical Etching for Recess Gate GaN HEMT Fumimasa Horikiri, Noboru Fukuhara, Masachika Toguchi, Kazuki Miwa, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka, Taketomo Sato, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple contactless PEC etching process including K2S2O8 to the electrolyte as an oxidizing agent, a sample is dipped into an electrolyte under UV irradiation. The oxidizing agent consumes photo-generated extra electrons, however, the details in the contactless PEC etching of epi grown on semi-insulating substrate was not clear. In this study, we describes that cathode design of the GaN HEMT epi sample for applying the simple contactless PEC etching to gate-recess process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Electrochemical / Etching / Recess process |
| Paper # | ED2019-98,MW2019-132 |
| Date of Issue | 2020-01-24 (ED, MW) |
| Conference Information | |
| Committee | ED / MW |
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| Conference Date | 2020/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Chair | Michihiko Suhara(TMU) / Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Hiroki Fujishiro(Saga Univ.) / Tadashi Kawai(Toyama Pref. Univ.) / Kensuke Okubo(Utsunomiya Univ.) / Shintaro Shinjo(Fujitsu Labs.) |
| Assistant | Junji Kotani(Fjitsu Lab.) / Takuya Tsutsumi(NTT) / Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Simple Photoelectrochemical Etching for Recess Gate GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Electrochemical |
| Keyword(3) | Etching |
| Keyword(4) | Recess process |
| 1st Author's Name | Fumimasa Horikiri |
| 1st Author's Affiliation | SCIOCS Company Ltd.(SCIOCS) |
| 2nd Author's Name | Noboru Fukuhara |
| 2nd Author's Affiliation | SCIOCS Company Ltd.(SCIOCS) |
| 3rd Author's Name | Masachika Toguchi |
| 3rd Author's Affiliation | Hokkaido University(Hokaido Univ.) |
| 4th Author's Name | Kazuki Miwa |
| 4th Author's Affiliation | Hokkaido University(Hokaido Univ.) |
| 5th Author's Name | Yoshinobu Narita |
| 5th Author's Affiliation | SCIOCS Company Ltd.(SCIOCS) |
| 6th Author's Name | Osamu Ichikawa |
| 6th Author's Affiliation | SCIOCS Company Ltd.(SCIOCS) |
| 7th Author's Name | Ryota Isono |
| 7th Author's Affiliation | SCIOCS Company Ltd.(SCIOCS) |
| 8th Author's Name | Takeshi Tanaka |
| 8th Author's Affiliation | SCIOCS Company Ltd.(SCIOCS) |
| 9th Author's Name | Taketomo Sato |
| 9th Author's Affiliation | Hokkaido University(Hokaido Univ.) |
| Date | 2020-01-31 |
| Paper # | ED2019-98,MW2019-132 |
| Volume (vol) | vol.119 |
| Number (no) | ED-408,MW-409 |
| Page | pp.pp.25-28(ED), pp.25-28(MW), |
| #Pages | 4 |
| Date of Issue | 2020-01-24 (ED, MW) |