| Presentation | 2020-01-31 [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Compound semiconductor electron devices such as GaN-based high electron mobility transistors (HEMTs) have been expected as key devices for ultra-high-speed wireless communications and expansion of radio spectrum sources in millimeter- and submillimeter-wave frequency band (30 GHz - 3 THz) because these devices can operate at a frequency over 100 GHz. We have improved device performances of GaN-based HEMTs with nanoscale gates ($L_{g}$ < 100 nm) and obtained a maximum oscillation frequency ($f_{max}$) of 287 GHz for an In$_{0.18}$Al$_{0.82}$N/AlN/GaN HEMT on GaN substrate. Moreover, we have also developing and setting a free-space method system for S-parameter measurement of materials to estimate their dielectric constants at millimeter- and submillimeter-wave frequencies, which are needed to design monolithic circuits operated at these frequencies. In this talk, we introduce details of the system and technology, and reported dielectric constants of InP wafer, PTFE (polytetrafluoroethylene) and PS (polystyrene) films measured in 60-220 GHz. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | millimeter- and submillimeter-wave / GaN-HEMT / maximum oscillation frequency (fmax) / cutoff frequency (fT) / Free-space method for S-parameter measurement / dielectric constant |
| Paper # | ED2019-105,MW2019-139 |
| Date of Issue | 2020-01-24 (ED, MW) |
| Conference Information | |
| Committee | ED / MW |
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| Conference Date | 2020/1/31(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound semiconductor, High speed and High frequency devices/Microwave technologies |
| Chair | Michihiko Suhara(TMU) / Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) / Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Hiroki Fujishiro(Saga Univ.) / Tadashi Kawai(Toyama Pref. Univ.) / Kensuke Okubo(Utsunomiya Univ.) / Shintaro Shinjo(Fujitsu Labs.) |
| Assistant | Junji Kotani(Fjitsu Lab.) / Takuya Tsutsumi(NTT) / Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices / Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Research and development of compound semiconductor electron devices and high-frequency measurement technologies for millimeter- and submillimeter-wave wireless communications |
| Sub Title (in English) | |
| Keyword(1) | millimeter- and submillimeter-wave |
| Keyword(2) | GaN-HEMT |
| Keyword(3) | maximum oscillation frequency (fmax) |
| Keyword(4) | cutoff frequency (fT) |
| Keyword(5) | Free-space method for S-parameter measurement |
| Keyword(6) | dielectric constant |
| 1st Author's Name | Issei Watanabe |
| 1st Author's Affiliation | National Institute of Info. & Com. Tech.(NICT) |
| 2nd Author's Name | Yoshimi Yamashita |
| 2nd Author's Affiliation | National Institute of Info. & Com. Tech.(NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Info. & Com. Tech.(NICT) |
| Date | 2020-01-31 |
| Paper # | ED2019-105,MW2019-139 |
| Volume (vol) | vol.119 |
| Number (no) | ED-408,MW-409 |
| Page | pp.pp.59-64(ED), pp.59-64(MW), |
| #Pages | 6 |
| Date of Issue | 2020-01-24 (ED, MW) |