Presentation | 2019-12-24 Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | |
Paper # | EID2019-5,SDM2019-80 |
Date of Issue | 2019-12-17 (EID, SDM) |
Conference Information | |
Committee | SDM / EID / ITE-IDY |
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Conference Date | 2019/12/24(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | NAIST |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Semiconductor Material Process and Device Meeting |
Chair | Takahiro Shinada(Tohoku Univ.) / Rumiko Yamaguchi(Akita Univ.) |
Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Hiroyuki Nitta(Japan Display) |
Secretary | Hiroshige Hirano(Shizuoka Univ.) / Masahiro Yamaguchi(KIOXIA) / Hiroyuki Nitta(NTT) / (NHK) |
Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Takeshi Okuno(Huawei) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays / Technical Group on Information Display |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing |
Sub Title (in English) | |
Keyword(1) | |
1st Author's Name | Masaaki Furukawa |
1st Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
2nd Author's Name | Mutsunori Uenuma |
2nd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
3rd Author's Name | Yasuaki Ishikawa |
3rd Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
4th Author's Name | Yukiharu Uraoka |
4th Author's Affiliation | Nara Institute of Science and Technology(NAIST) |
Date | 2019-12-24 |
Paper # | EID2019-5,SDM2019-80 |
Volume (vol) | vol.119 |
Number (no) | EID-355,SDM-356 |
Page | pp.pp.1-4(EID), pp.1-4(SDM), |
#Pages | 4 |
Date of Issue | 2019-12-17 (EID, SDM) |