Presentation 2019-12-24
Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing
Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # EID2019-5,SDM2019-80
Date of Issue 2019-12-17 (EID, SDM)

Conference Information
Committee SDM / EID / ITE-IDY
Conference Date 2019/12/24(1days)
Place (in Japanese) (See Japanese page)
Place (in English) NAIST
Topics (in Japanese) (See Japanese page)
Topics (in English) Semiconductor Material Process and Device Meeting
Chair Takahiro Shinada(Tohoku Univ.) / Rumiko Yamaguchi(Akita Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic) / Masahiro Yamaguchi(Tokyo Inst. of Tech.) / Hiroyuki Nitta(Japan Display)
Secretary Hiroshige Hirano(Shizuoka Univ.) / Masahiro Yamaguchi(KIOXIA) / Hiroyuki Nitta(NTT) / (NHK)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Mutsumi Kimura(Ryukoku Univ.) / Tomokazu Shiga(Univ. of Electro-Comm.) / Takeshi Okuno(Huawei) / Hiroko Kominami(Shizuoka Univ.) / Masanobu Mizusaki(SHARP) / Masayuki Kanbara(NAIST)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays / Technical Group on Information Display
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing
Sub Title (in English)
Keyword(1)
1st Author's Name Masaaki Furukawa
1st Author's Affiliation Nara Institute of Science and Technology(NAIST)
2nd Author's Name Mutsunori Uenuma
2nd Author's Affiliation Nara Institute of Science and Technology(NAIST)
3rd Author's Name Yasuaki Ishikawa
3rd Author's Affiliation Nara Institute of Science and Technology(NAIST)
4th Author's Name Yukiharu Uraoka
4th Author's Affiliation Nara Institute of Science and Technology(NAIST)
Date 2019-12-24
Paper # EID2019-5,SDM2019-80
Volume (vol) vol.119
Number (no) EID-355,SDM-356
Page pp.pp.1-4(EID), pp.1-4(SDM),
#Pages 4
Date of Issue 2019-12-17 (EID, SDM)