| Presentation | 2019-12-23 GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi, Issei Watanabe, Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu, Akira Endoh, Hiroki Fujishiro, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. We used strained-Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer and AlInSb barrier layer with high Al content. As a result, the sheet electron density NS increases while keeping relatively high electron mobility ? compared with the Al0.25In0.75Sb/InSb HEMT which we fabricated previously. We obtained a cutoff frequency fT of 214 GHz for the 40-nm-gate HEMT and a maximum oscillation frequency fmax of 179 GHz for the 200-nm-gate HEMT. Furthermore, this novel GaInSb HEMT structure contributes to the reduction of gate leakage current as well as the increase of NS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High Electron Mobility Transistor / HEMT / GaInSb / InSb / Quantum well / Cutoff frequency / Maximum oscillation frequency |
| Paper # | ED2019-83 |
| Date of Issue | 2019-12-16 (ED) |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2019/12/23(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Michihiko Suhara(TMU) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Hiroki Fujishiro(Saga Univ.) |
| Assistant | Junji Kotani(Fjitsu Lab.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer |
| Sub Title (in English) | |
| Keyword(1) | High Electron Mobility Transistor |
| Keyword(2) | HEMT |
| Keyword(3) | GaInSb |
| Keyword(4) | InSb |
| Keyword(5) | Quantum well |
| Keyword(6) | Cutoff frequency |
| Keyword(7) | Maximum oscillation frequency |
| 1st Author's Name | Koki Osawa |
| 1st Author's Affiliation | Tokyo University of Science(TUS) |
| 2nd Author's Name | Takuya Iwaki |
| 2nd Author's Affiliation | Tokyo University of Science(TUS) |
| 3rd Author's Name | Yuki Endoh |
| 3rd Author's Affiliation | Tokyo University of Science(TUS) |
| 4th Author's Name | Mizuho Hiraoka |
| 4th Author's Affiliation | Tokyo University of Science(TUS) |
| 5th Author's Name | Naoyuki Kishimoto |
| 5th Author's Affiliation | Tokyo University of Science(TUS) |
| 6th Author's Name | Takuya Hayashi |
| 6th Author's Affiliation | Tokyo University of Science(TUS) |
| 7th Author's Name | Issei Watanabe |
| 7th Author's Affiliation | National Institute of Information and Communications Technology/Tokyo University of Science(NICT/TUS) |
| 8th Author's Name | Yoshimi Yamashita |
| 8th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 9th Author's Name | Shinsuke Hara |
| 9th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 10th Author's Name | Takahiro Gotow |
| 10th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 11th Author's Name | Akifumi Kasamatsu |
| 11th Author's Affiliation | National Institute of Information and Communications Technology(NICT) |
| 12th Author's Name | Akira Endoh |
| 12th Author's Affiliation | Tokyo University of Science(TUS) |
| 13th Author's Name | Hiroki Fujishiro |
| 13th Author's Affiliation | Tokyo University of Science(TUS) |
| Date | 2019-12-23 |
| Paper # | ED2019-83 |
| Volume (vol) | vol.119 |
| Number (no) | ED-353 |
| Page | pp.pp.29-32(ED), |
| #Pages | 4 |
| Date of Issue | 2019-12-16 (ED) |