| Presentation | 2019-11-22 Planar-type electron source based on a graphene/h-BN heterostructure Tomoya Igari, Masayoshi Nagao, Kazutaka Mitsuishi, Masahiro Sasaki, Yoichi Yamada, Katsuhisa Murakami, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostructure was developed. The emission current reached a few A/cm$^2$, which was ten times higher than that from a conventional GOS device. The full width at half maximum of the energy distribution of electrons emitted from the graphene/$h$-BN emission device was smaller than 0.6 eV. This is narrower than that from conventional Schottky emitters. In the small current region, energy spread was as small as 0.3 eV, approaching the range of a conventional cold field emitters.These superior properties of the present device, such as high emission current with low energy spread and low operation voltage, open new applications. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | graphene / hexagonal boron nitride / planar-type electron source |
| Paper # | ED2019-75 |
| Date of Issue | 2019-11-14 (ED) |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2019/11/21(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Michihiko Suhara(TMU) |
| Vice Chair | Hiroki Fujishiro(Tokyo Univ. of Science) |
| Secretary | Hiroki Fujishiro(Saga Univ.) |
| Assistant | Junji Kotani(Fjitsu Lab.) / Takuya Tsutsumi(NTT) |
| Paper Information | |
| Registration To | Technical Committee on Electron Devices |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Planar-type electron source based on a graphene/h-BN heterostructure |
| Sub Title (in English) | |
| Keyword(1) | graphene |
| Keyword(2) | hexagonal boron nitride |
| Keyword(3) | planar-type electron source |
| 1st Author's Name | Tomoya Igari |
| 1st Author's Affiliation | University of Tsukuba/National Institute of Advanced Industrial Science and Technology(Univ. of Tsukuba/AIST) |
| 2nd Author's Name | Masayoshi Nagao |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Kazutaka Mitsuishi |
| 3rd Author's Affiliation | National Institute for Materials Science(NIMS) |
| 4th Author's Name | Masahiro Sasaki |
| 4th Author's Affiliation | University of Tsukuba(Univ. of Tsukuba) |
| 5th Author's Name | Yoichi Yamada |
| 5th Author's Affiliation | University of Tsukuba(Univ. of Tsukuba) |
| 6th Author's Name | Katsuhisa Murakami |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology/University of Tsukuba(AIST/Univ. of Tsukuba) |
| Date | 2019-11-22 |
| Paper # | ED2019-75 |
| Volume (vol) | vol.119 |
| Number (no) | ED-305 |
| Page | pp.pp.63-66(ED), |
| #Pages | 4 |
| Date of Issue | 2019-11-14 (ED) |