| Presentation | 2019-11-14 6-10GHz Cryogenic GaAs pHEMT LNA MMIC Hayato Shimizu, Yudai Iwashita, Ryotaro Iwamoto, Tamio Kawaguchi, Kenjiro Nishikawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper demonstrates a cryogenic broadband GaAs pHEMT LNA MMIC. The LNA was designed by using the modified GaAs pHEMT model, which includes the thermal characteristics of each device material. The MMIC was fabricated by using a commercial 0.25μm GaAs pHEMT process. The fabricated LNA MMIC achieved a noise figure of less than 0.3dB and an associated gain of over 15dB at 6-10 GHz. The corresponding return losses are better than 10dB. At 7GHz, the LNA realized a noise figure of 0.11dB (a noise temperature of7.7K) and an associated gain of 20dB. The power consumption is 25 mW. The MMIC size is 1.4mm x 1.0mm. These performances are the same level as those of LNAs at 10K-20K operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | MW2019-110 |
| Date of Issue | 2019-11-07 (MW) |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2019/11/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Minami Daido Villa. Tamokuteki Koryu Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Chair | Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Tadashi Kawai(Utsunomiya Univ.) / Kensuke Okubo(Fujitsu Labs.) / Shintaro Shinjo |
| Assistant | Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 6-10GHz Cryogenic GaAs pHEMT LNA MMIC |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Hayato Shimizu |
| 1st Author's Affiliation | Kagoshima University(Kagoshima Univ.) |
| 2nd Author's Name | Yudai Iwashita |
| 2nd Author's Affiliation | Kagoshima University(Kagoshima Univ.) |
| 3rd Author's Name | Ryotaro Iwamoto |
| 3rd Author's Affiliation | Kagoshima University(Kagoshima Univ.) |
| 4th Author's Name | Tamio Kawaguchi |
| 4th Author's Affiliation | Toshiba Corporation(Toshiba Corp.) |
| 5th Author's Name | Kenjiro Nishikawa |
| 5th Author's Affiliation | Kagoshima University(Kagoshima Univ.) |
| Date | 2019-11-14 |
| Paper # | MW2019-110 |
| Volume (vol) | vol.119 |
| Number (no) | MW-292 |
| Page | pp.pp.59-63(MW), |
| #Pages | 5 |
| Date of Issue | 2019-11-07 (MW) |