| Presentation | 2019-11-14 High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment Takuya Seshimo, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Further high efficiency and high functionality of power amplifier are required for the next generation wireless communication systems. With the advancement of communication systems, digitally modulated signals processed by transmitters such as base stations have higher peak-to-average power ratio (PAPR) than before. For this, power amplifiers require high-efficiency amplification over a wide dynamic power range. A Doherty power amplifier (DA) is one powerful solution for this issue. We have proposed DA without a quarter-wave transformer. We aimed at higher efficiency based on the design method of DA without a quarter-wave transformer. For this purpose, the harmonic treatments were added to the matching circuit of the main amplifier and auxiliary amplifier used in the DA, and it was designed, prototyped and evaluated. The fabricated DPA achieved a maximum drain efficiency of 67% and a maximum power-added efficiency (PAE) of 61% with a saturation output power of 40 dBm at 4.7 GHz. Furthermore, in a 7-dB back-off condition, a drain efficiency of 66% and a PAE of 60% were obtained, which were comparable to the saturated output power efficiencies and had excellent back-off performance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Doherty power amplifier / Harmonic treatment / GaN HEMT |
| Paper # | MW2019-106 |
| Date of Issue | 2019-11-07 (MW) |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2019/11/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Minami Daido Villa. Tamokuteki Koryu Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Chair | Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Tadashi Kawai(Utsunomiya Univ.) / Kensuke Okubo(Fujitsu Labs.) / Shintaro Shinjo |
| Assistant | Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment |
| Sub Title (in English) | |
| Keyword(1) | Doherty power amplifier |
| Keyword(2) | Harmonic treatment |
| Keyword(3) | GaN HEMT |
| 1st Author's Name | Takuya Seshimo |
| 1st Author's Affiliation | The University of Electro-Communications(UEC) |
| 2nd Author's Name | Yoichiro Takayama |
| 2nd Author's Affiliation | The University of Electro-Communications(UEC) |
| 3rd Author's Name | Ryo Ishikawa |
| 3rd Author's Affiliation | The University of Electro-Communications(UEC) |
| 4th Author's Name | Kazuhiko Honjo |
| 4th Author's Affiliation | The University of Electro-Communications(UEC) |
| Date | 2019-11-14 |
| Paper # | MW2019-106 |
| Volume (vol) | vol.119 |
| Number (no) | MW-292 |
| Page | pp.pp.35-39(MW), |
| #Pages | 5 |
| Date of Issue | 2019-11-07 (MW) |