Presentation 2019-11-08
Change in Electrical Characteristics with Change of Channel Structure in Integrated FET Using Piezoelectric Film P (VDF-TrFE) as Gate Insulator
Shusaku Matsumoto, Takuya Okayama, Akio Furukawa,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # CPM2019-50
Date of Issue 2019-10-31 (CPM)

Conference Information
Committee CPM
Conference Date 2019/11/7(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Fukui univ.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Mayumi Takeyama(Kitami Inst. of Tech.)
Vice Chair Yuichi Nakamura(Toyohashi Univ. of Tech.)
Secretary Yuichi Nakamura(Hirosaki Univ.)
Assistant Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.)

Paper Information
Registration To Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Change in Electrical Characteristics with Change of Channel Structure in Integrated FET Using Piezoelectric Film P (VDF-TrFE) as Gate Insulator
Sub Title (in English)
Keyword(1)
1st Author's Name Shusaku Matsumoto
1st Author's Affiliation Tokyo University of Science(Tokyo Univ. of Science)
2nd Author's Name Takuya Okayama
2nd Author's Affiliation Tokyo University of Science(Tokyo Univ. of Science)
3rd Author's Name Akio Furukawa
3rd Author's Affiliation Tokyo University of Science(Tokyo Univ. of Science)
Date 2019-11-08
Paper # CPM2019-50
Volume (vol) vol.119
Number (no) CPM-271
Page pp.pp.31-34(CPM),
#Pages 4
Date of Issue 2019-10-31 (CPM)