| Presentation | 2019-11-14 Gate Switching Mode Low Power Transistor Rectifier using Enhancement-Mode GaAs HEMT Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In an RF energy-harvesting utilizing environmental electromagnetic waves, a high-efficiency rectifier is required to convert the ultra-low power environmental electromagnetic waves into DC power. In this paper, a circuit configuration of a self-switching-type transistor rectifier has been proposed by using the anti-resonance between the feedback capacitance in the transistor and the external inductor, in order to increase both of the gate switching voltage and drain voltage swing. The operation was successfully analyzed based on a small-signal equivalent circuit approximation. Then, for a realization of the ultra-low power transistor rectifier, a low-threshold enhancement-mode GaAs HEMT with strong nonlinearity was used. A fabricated enhancement-mode GaAs HEMT rectifier exhibited an RF-to-DC conversion efficiency of 23.2% and DC output voltage of 21 mV for -30 dBm input power at 2.4 GHz band |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | rectifier / energy harvesting |
| Paper # | MW2019-103 |
| Date of Issue | 2019-11-07 (MW) |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2019/11/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Minami Daido Villa. Tamokuteki Koryu Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Chair | Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Tadashi Kawai(Utsunomiya Univ.) / Kensuke Okubo(Fujitsu Labs.) / Shintaro Shinjo |
| Assistant | Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gate Switching Mode Low Power Transistor Rectifier using Enhancement-Mode GaAs HEMT |
| Sub Title (in English) | |
| Keyword(1) | rectifier |
| Keyword(2) | energy harvesting |
| 1st Author's Name | Tsuyoshi Yoshida |
| 1st Author's Affiliation | The University of Electro-Communications(UEC) |
| 2nd Author's Name | Ryo Ishikawa |
| 2nd Author's Affiliation | The University of Electro-Communications(UEC) |
| 3rd Author's Name | Kazuhiko Honjo |
| 3rd Author's Affiliation | The University of Electro-Communications(UEC) |
| Date | 2019-11-14 |
| Paper # | MW2019-103 |
| Volume (vol) | vol.119 |
| Number (no) | MW-292 |
| Page | pp.pp.19-24(MW), |
| #Pages | 6 |
| Date of Issue | 2019-11-07 (MW) |