| Presentation | 2019-11-14 A Study about Low Loss Output Matching Circuit Design and Optimization of Bias Condition for K-Band GaN Power Amplifier Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Power Amplifier is required to have both high efficiency and linearity in satellite communication. This paper presents the design method and measurement result of K-Band GaN power amplifier for satellite communication. Study about optimization of output matching circuit loss at 17.7 to 21 GHz to achieve high efficiency and optimization of bias condition to achieve high linearity are described. The fabricated power amplifier demonstrates 4W of output power and 30% of power added efficiency. It also demonstrates 26% of power added efficiency with 15 dBc of NPR is reached. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Powe Amplifier / GaN / Gate Bias / IM3 / NPR |
| Paper # | MW2019-104 |
| Date of Issue | 2019-11-07 (MW) |
| Conference Information | |
| Committee | MW |
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| Conference Date | 2019/11/14(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Minami Daido Villa. Tamokuteki Koryu Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Chair | Yoshinori Kogami(Utsunomiya Univ.) |
| Vice Chair | Tadashi Kawai(Univ. of Hyogo) / Kensuke Okubo(Okayama Prefectural Univ.) / Shintaro Shinjo(Mitsubishi Electric) |
| Secretary | Tadashi Kawai(Utsunomiya Univ.) / Kensuke Okubo(Fujitsu Labs.) / Shintaro Shinjo |
| Assistant | Satoshi Yoshida(Kagoshima Univ.) / Kyoya Takano(Tokyo Univ. of Science) |
| Paper Information | |
| Registration To | Technical Committee on Microwaves |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Study about Low Loss Output Matching Circuit Design and Optimization of Bias Condition for K-Band GaN Power Amplifier |
| Sub Title (in English) | |
| Keyword(1) | Powe Amplifier |
| Keyword(2) | GaN |
| Keyword(3) | Gate Bias |
| Keyword(4) | IM3 |
| Keyword(5) | NPR |
| 1st Author's Name | Takuma Torii |
| 1st Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 2nd Author's Name | Masatake Hangai |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 3rd Author's Name | Ryuji Inagaki |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| 4th Author's Name | Shintaro Shinjo |
| 4th Author's Affiliation | Mitsubishi Electric Corporation(Mitsubishi Electric) |
| Date | 2019-11-14 |
| Paper # | MW2019-104 |
| Volume (vol) | vol.119 |
| Number (no) | MW-292 |
| Page | pp.pp.25-28(MW), |
| #Pages | 4 |
| Date of Issue | 2019-11-07 (MW) |