| Presentation | 2019-11-14 Device characteristic measurement for realizing CMOS-compatible non-volatile memory using FiCC Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can be programmed and erased without large supply current, as well as a characteristics measurement circuit for it. In recent years, self-powered sensor chips using micro energy harvesting based on on-chip solar cells have been studied. For such sensor chips, however, non-volatile memory is indispensable to retain the data during night time. We propose a new memory element that consists of Fishbone-in-Cage Capacitor (FiCC) and an NMOS to realize the double-gate structure of flash memory without using dedicated fabrication processes. We also developed a circuit for measuring the threshold voltage of the memory element to clarify the feasibility of using FN tunneling for programming and erasing operations to reduce the supply current. We observed that threshold voltage shifts to 4V by applying 5V programming voltage for 5 sec, and it remains for a day. We also noted that only a little degradation appears after 5000 program-erase cycles. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | flash memory / metal-fringe capacitor / micro energy harvesting / threshold voltage measurement |
| Paper # | VLD2019-36,DC2019-60 |
| Date of Issue | 2019-11-06 (VLD, DC) |
| Conference Information | |
| Committee | VLD / DC / CPSY / RECONF / ICD / IE / IPSJ-SLDM / IPSJ-EMB / IPSJ-ARC |
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| Conference Date | 2019/11/13(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Ehime Prefecture Gender Equality Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Design Gaia 2019 -New Field of VLSI Design- |
| Chair | Nozomu Togawa(Waseda Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Yuichiro Shibata(Nagasaki Univ.) / Makoto Nagata(Kobe Univ.) / Hideaki Kimata(NTT) / Yutaka Tamiya(Fujitsu Lab.) / / Hiroshi Inoue(Kyushu Univ.) |
| Vice Chair | Daisuke Fukuda(Fujitsu Labs.) / Hiroshi Takahashi(Ehime Univ.) / Michihiro Koibuchi(NII) / Kota Nakajima(Fujitsu Lab.) / Kentaro Sano(RIKEN) / Yoshiki Yamaguchi(Tsukuba Univ.) / Masafumi Takahashi(Toshiba-memory) / Kazuya Kodama(NII) / Keita Takahashi(Nagoya Univ.) |
| Secretary | Daisuke Fukuda(Univ. of Aizu) / Hiroshi Takahashi(Hitachi) / Michihiro Koibuchi(Nihon Univ.) / Kota Nakajima(Chiba Univ.) / Kentaro Sano(Nagoya Inst. of Tech.) / Yoshiki Yamaguchi(Hokkaido Univ.) / Masafumi Takahashi(Hiroshima City Univ.) / Kazuya Kodama(e-trees.Japan) / Keita Takahashi(Tohoku Univ.) / (Socionext) / (NTT) / (NHK) |
| Assistant | Kazuki Ikeda(Hitachi) / / Eiji Arima(Univ. of Tokyo) / Shugo Ogawa(Hitachi) / Yuuki Kobayashi(NEC) / Hiroki Nakahara(Tokyo Inst. of Tech.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.) / Kyohei Unno(KDDI Research) / Norishige Fukushima(Nagoya Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering / Special Interest Group on System and LSI Design Methodology / Special Interest Group on Embedded Systems / Special Interest Group on System Architecture |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device characteristic measurement for realizing CMOS-compatible non-volatile memory using FiCC |
| Sub Title (in English) | |
| Keyword(1) | flash memory |
| Keyword(2) | metal-fringe capacitor |
| Keyword(3) | micro energy harvesting |
| Keyword(4) | threshold voltage measurement |
| 1st Author's Name | Ippei Tanaka |
| 1st Author's Affiliation | Ritsumeikan University(Ritsumeikan Univ.) |
| 2nd Author's Name | Naoyuki Miyagawa |
| 2nd Author's Affiliation | Ritsumeikan University(Ritsumeikan Univ.) |
| 3rd Author's Name | Tomoya Kimura |
| 3rd Author's Affiliation | Ritsumeikan University(Ritsumeikan Univ.) |
| 4th Author's Name | Takashi Imagawa |
| 4th Author's Affiliation | Ritsumeikan University(Ritsumeikan Univ.) |
| 5th Author's Name | Hiroyuki Ochi |
| 5th Author's Affiliation | Ritsumeikan University(Ritsumeikan Univ.) |
| Date | 2019-11-14 |
| Paper # | VLD2019-36,DC2019-60 |
| Volume (vol) | vol.119 |
| Number (no) | VLD-282,DC-283 |
| Page | pp.pp.63-68(VLD), pp.63-68(DC), |
| #Pages | 6 |
| Date of Issue | 2019-11-06 (VLD, DC) |