| Presentation | 2019-11-26 Feasibility Study of Variable Voltage Sources for IGBT Drive Kazuto Ura, Yoichi Ishizuka, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-power / high-voltage converters are used in housings for industrial and automotive applications, and insulated gate bipolar transistors (IGBTs) are still the mainstream today as internal switching devices. In this paper, we propose a circuit that uses the voltage generated by the DC-DC converter as the voltage source of the IGBT gate drive circuit. The purpose is to improve IGBT reliability and electromagnetic interference (EMI) reduction by controlling the drive power supply and suppressing the voltage surge and reverse recovery current generated in driving the IGBT. It is confirmed whether or not the gate drive waveform of the IGBT can be controlled by simulation and experiment. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | IGBT / GaN / Gate Drive / Switching Characteristic / Double Pulse Test |
| Paper # | EE2019-36,CPM2019-78,OME2019-22 |
| Date of Issue | 2019-11-19 (EE, CPM, OME) |
| Conference Information | |
| Committee | EE / OME / CPM |
|---|---|
| Conference Date | 2019/11/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Japan Society for the Promotiton of Machine Industry |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tadatoshi Babasaki(NTT Facilities) / Yutaka Majima(Tokyo Inst. of Tech.) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Vice Chair | Keiichi Hirose(NTT Facilities) / Tadashi Suetsugu(Fukuoka Univ.) / Toshiki Yamada(NICT) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Secretary | Keiichi Hirose(Sojo Univ.) / Tadashi Suetsugu(Nagasaki Inst. of Applied Science) / Toshiki Yamada(Tokyo Inst. of Tech.) / Yuichi Nakamura(Osaka Univ.) |
| Assistant | Takashi Matsushita(NTT-F) / Tetsuya Oshikata(ShinDengen) / Yuu Yonezawa(FUJITSU Advanced Technologies) / Toshihiko Kaji(Tokyo Univ. of Agriculture and Tech.) / Yoshiyuki Seike(Aichi Inst. of Tech.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications / Technical Committee on Organic Molecular Electronics / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Feasibility Study of Variable Voltage Sources for IGBT Drive |
| Sub Title (in English) | |
| Keyword(1) | IGBT |
| Keyword(2) | GaN |
| Keyword(3) | Gate Drive |
| Keyword(4) | Switching Characteristic |
| Keyword(5) | Double Pulse Test |
| 1st Author's Name | Kazuto Ura |
| 1st Author's Affiliation | Nagasaki University(Nagasaki Univ.) |
| 2nd Author's Name | Yoichi Ishizuka |
| 2nd Author's Affiliation | Nagasaki University(Nagasaki Univ.) |
| Date | 2019-11-26 |
| Paper # | EE2019-36,CPM2019-78,OME2019-22 |
| Volume (vol) | vol.119 |
| Number (no) | EE-309,CPM-310,OME-311 |
| Page | pp.pp.1-6(EE), pp.1-6(CPM), pp.1-6(OME), |
| #Pages | 6 |
| Date of Issue | 2019-11-19 (EE, CPM, OME) |