Presentation 2019-11-14
Neural Network-based Lifetime Prediction and Reliability Enhancement Techniques for 3D NAND Flash Memory
Masaki Abe, Ken Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) NAND flash memories have lifetime such as data-retention time and read cycles. This paper proposes neural network technique to predict lifetime of NAND flash memories. In addition, this paper proposes a method to correct cell errors of NAND flash memories. Neural network learns dependence of cell errors and can detect errors. The detected error bits are flipped and corrected. As a result, this method improves the reliability of 3D NAND flash memory. During pre-shipment test in fabs, lifetime of NAND flash memories is predicted. Based on the lifetime, NAND flash chips are sorted. Optimal chips are shipped to markets such as archives where chips with long data-retention lifetime are required and markets where data is read frequently, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) NAND Flash Memory / Neural Network / Error-correcting Code
Paper # ICD2019-30,IE2019-36
Date of Issue 2019-11-07 (ICD, IE)

Conference Information
Committee VLD / DC / CPSY / RECONF / ICD / IE / IPSJ-SLDM / IPSJ-EMB / IPSJ-ARC
Conference Date 2019/11/13(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Ehime Prefecture Gender Equality Center
Topics (in Japanese) (See Japanese page)
Topics (in English) Design Gaia 2019 -New Field of VLSI Design-
Chair Nozomu Togawa(Waseda Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Hidetsugu Irie(Univ. of Tokyo) / Yuichiro Shibata(Nagasaki Univ.) / Makoto Nagata(Kobe Univ.) / Hideaki Kimata(NTT) / Yutaka Tamiya(Fujitsu Lab.) / / Hiroshi Inoue(Kyushu Univ.)
Vice Chair Daisuke Fukuda(Fujitsu Labs.) / Hiroshi Takahashi(Ehime Univ.) / Michihiro Koibuchi(NII) / Kota Nakajima(Fujitsu Lab.) / Kentaro Sano(RIKEN) / Yoshiki Yamaguchi(Tsukuba Univ.) / Masafumi Takahashi(Toshiba-memory) / Kazuya Kodama(NII) / Keita Takahashi(Nagoya Univ.)
Secretary Daisuke Fukuda(Univ. of Aizu) / Hiroshi Takahashi(Hitachi) / Michihiro Koibuchi(Nihon Univ.) / Kota Nakajima(Chiba Univ.) / Kentaro Sano(Nagoya Inst. of Tech.) / Yoshiki Yamaguchi(Hokkaido Univ.) / Masafumi Takahashi(Hiroshima City Univ.) / Kazuya Kodama(e-trees.Japan) / Keita Takahashi(Tohoku Univ.) / (Socionext) / (NTT) / (NHK)
Assistant Kazuki Ikeda(Hitachi) / / Eiji Arima(Univ. of Tokyo) / Shugo Ogawa(Hitachi) / Yuuki Kobayashi(NEC) / Hiroki Nakahara(Tokyo Inst. of Tech.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.) / Kyohei Unno(KDDI Research) / Norishige Fukushima(Nagoya Inst. of Tech.)

Paper Information
Registration To Technical Committee on VLSI Design Technologies / Technical Committee on Dependable Computing / Technical Committee on Computer Systems / Technical Committee on Reconfigurable Systems / Technical Committee on Integrated Circuits and Devices / Technical Committee on Image Engineering / Special Interest Group on System and LSI Design Methodology / Special Interest Group on Embedded Systems / Special Interest Group on System Architecture
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Neural Network-based Lifetime Prediction and Reliability Enhancement Techniques for 3D NAND Flash Memory
Sub Title (in English)
Keyword(1) NAND Flash Memory
Keyword(2) Neural Network
Keyword(3) Error-correcting Code
1st Author's Name Masaki Abe
1st Author's Affiliation Chuo University(Chuo Univ.)
2nd Author's Name Ken Takeuchi
2nd Author's Affiliation Chuo University(Chuo Univ.)
Date 2019-11-14
Paper # ICD2019-30,IE2019-36
Volume (vol) vol.119
Number (no) ICD-284,IE-285
Page pp.pp.7-12(ICD), pp.7-12(IE),
#Pages 6
Date of Issue 2019-11-07 (ICD, IE)