| Presentation | 2019-08-09 Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET" Takuya Yamada, Jiro Ida, Takayuki Mori, Nobuhiko Yasumaru, Kenji Itoh, Koichiro Ishibashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this report，we have simulated the rectification efficiency of the rectenna using PNBT Diode that is a diode-connected PN-body Tied SOI-FET with super steep subthreshold characteristics proposed in our laboratory．From the simulation， it was confirmed that the rectification efficiency is greatly improved by moving the threshold voltage of the super steep close to 0 V by adjusting the threshold. In addition，it was confirmed that the device can be applied as a rectifier even if the super steep voltage is slightly high by increasing the gate width |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | RF Energy Harvesting / SOI-FET |
| Paper # | SDM2019-52,ICD2019-17 |
| Date of Issue | 2019-07-31 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2019/8/7(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Graduate School /Faculty of Information Science and |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / 秋田 純一(金沢大)) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Masafumi Takahashi(Toshiba-memory) / 廣瀬 裕(パナソニック) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) / Masafumi Takahashi(TOSHIBA MEMORY) / 廣瀬 裕(Tohoku Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET" |
| Sub Title (in English) | |
| Keyword(1) | RF Energy Harvesting |
| Keyword(2) | SOI-FET |
| 1st Author's Name | Takuya Yamada |
| 1st Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 2nd Author's Name | Jiro Ida |
| 2nd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 3rd Author's Name | Takayuki Mori |
| 3rd Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 4th Author's Name | Nobuhiko Yasumaru |
| 4th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 5th Author's Name | Kenji Itoh |
| 5th Author's Affiliation | Kanazawa Institute of Technology(KIT) |
| 6th Author's Name | Koichiro Ishibashi |
| 6th Author's Affiliation | The University of Electro-Communications(UEC) |
| Date | 2019-08-09 |
| Paper # | SDM2019-52,ICD2019-17 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-161,ICD-162 |
| Page | pp.pp.95-98(SDM), pp.95-98(ICD), |
| #Pages | 4 |
| Date of Issue | 2019-07-31 (SDM, ICD) |