| Presentation | 2019-08-22 [Invited Talk] 3D Flash Memory Cell Reliability Yuichiro Mitani, Harumi Seki, Takanori Asano, Yasushi Nakasaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | As conventional planar NAND flash memories are limited from physical and electrical scaling point of view, the three-dimensional flash memories, in which memory cells are stacked vertically, has rapidly achieved maturity to keep a trend of increasing bit density and reducing bit cost. To realize more capacity, total number of layers are increasing (>64 layers) and multi-level cell (MLC) operations are indispensable (>3bit/cell). Extending this capacity trend requires highly-reliable memory cell. This paper focus on the typical charge-trap type memory cells, and the reliability issues will be discussed |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Flash memory / Reliability / Insulators / Defect / Trap |
| Paper # | R2019-26,EMD2019-24,CPM2019-25,OPE2019-53,LQE2019-31 |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) |
| Conference Information | |
| Committee | LQE / OPE / CPM / EMD / R |
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| Conference Date | 2019/8/22(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Aruga(Mitsubishi Electric) / Hiroshi Takahashi(Sophia Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Shinichi Wada(TMC System) / Akira Asato(Fujitsu) |
| Vice Chair | Hiroshi Yasaka(Tohoku Univ.) / Goji Nakagawa(Fujitsu Labs.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Tadashi Dohi(Hiroshima Univ.) |
| Secretary | Hiroshi Yasaka(Furukawa Electric Industries) / Goji Nakagawa(Osaka Univ.) / Yuichi Nakamura(Tokyo Inst. of Tech.) / Yoshiki Kayano(NTT) / Tadashi Dohi(Hirosaki Univ.) |
| Assistant | Fumito Nakajima(NTT) / Kenta Miura(Gunma Univ.) / Yuki Wakayama(Hitachi) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Hayashi(ＮＡＩＳＴ) / Hiroyuki Okamura(Hiroshima Univ.) / Shinji Yokogawa(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on OptoElectronics / Technical Committee on Component Parts and Materials / Technical Committee on Electromechanical Devices / Technical Committee on Reliability |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] 3D Flash Memory Cell Reliability |
| Sub Title (in English) | |
| Keyword(1) | Flash memory |
| Keyword(2) | Reliability |
| Keyword(3) | Insulators |
| Keyword(4) | Defect |
| Keyword(5) | Trap |
| 1st Author's Name | Yuichiro Mitani |
| 1st Author's Affiliation | Toshiba Memory Corporation(Toshiba Memory) |
| 2nd Author's Name | Harumi Seki |
| 2nd Author's Affiliation | Toshiba Memory Corporation(Toshiba Memory) |
| 3rd Author's Name | Takanori Asano |
| 3rd Author's Affiliation | Toshiba Memory Corporation(Toshiba Memory) |
| 4th Author's Name | Yasushi Nakasaki |
| 4th Author's Affiliation | Toshiba Memory Corporation(Toshiba Memory) |
| Date | 2019-08-22 |
| Paper # | R2019-26,EMD2019-24,CPM2019-25,OPE2019-53,LQE2019-31 |
| Volume (vol) | vol.119 |
| Number (no) | R-169,EMD-170,CPM-171,OPE-172,LQE-173 |
| Page | pp.pp.35-38(R), pp.35-38(EMD), pp.35-38(CPM), pp.35-38(OPE), pp.35-38(LQE), |
| #Pages | 4 |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) |