| Presentation | 2019-08-22 [Invited Talk] Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors Kenji Okada, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sensors have been increasing the importance of SiO2 and SiN-based THICK dielectric films (> ~20 nm). Because of their thicknesses and relatively low integrities, carrier charging under electrical stress prevents us from appropriately understanding their TDDB characteristics. This paper demonstrates the charging-induced dynamic stress relaxation (CiDSR) effect causes the misunderstanding of TDDB statistics in thick SiO2 and of the TDDB model of SiN films. Then, the constant-delta E model is proposed as an appropriate model for SiN film by suppressing the CiDSR effect. Furthermore, the anomalous thickness dependence of the Weibull slope is reported in both SiO2 and SiN films and the Generalized model is proposed to explain it by combining the conventional percolation model and the constant-delta E model. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | dielectrics / TDDB / Weibull slope / dielectric breakdown / image sensor / GaN / SiC / power device |
| Paper # | R2019-25,EMD2019-23,CPM2019-24,OPE2019-52,LQE2019-30 |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) |
| Conference Information | |
| Committee | LQE / OPE / CPM / EMD / R |
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| Conference Date | 2019/8/22(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Hiroshi Aruga(Mitsubishi Electric) / Hiroshi Takahashi(Sophia Univ.) / Mayumi Takeyama(Kitami Inst. of Tech.) / Shinichi Wada(TMC System) / Akira Asato(Fujitsu) |
| Vice Chair | Hiroshi Yasaka(Tohoku Univ.) / Goji Nakagawa(Fujitsu Labs.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) / Yoshiki Kayano(Univ. of Electro-Comm.) / Tadashi Dohi(Hiroshima Univ.) |
| Secretary | Hiroshi Yasaka(Furukawa Electric Industries) / Goji Nakagawa(Osaka Univ.) / Yuichi Nakamura(Tokyo Inst. of Tech.) / Yoshiki Kayano(NTT) / Tadashi Dohi(Hirosaki Univ.) |
| Assistant | Fumito Nakajima(NTT) / Kenta Miura(Gunma Univ.) / Yuki Wakayama(Hitachi) / Yasuo Kimura(Tokyo Univ. of Tech.) / Tomoaki Terasako(Ehime Univ.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Hayashi(ＮＡＩＳＴ) / Hiroyuki Okamura(Hiroshima Univ.) / Shinji Yokogawa(Univ. of Electro-Comm.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on OptoElectronics / Technical Committee on Component Parts and Materials / Technical Committee on Electromechanical Devices / Technical Committee on Reliability |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors |
| Sub Title (in English) | |
| Keyword(1) | dielectrics |
| Keyword(2) | TDDB |
| Keyword(3) | Weibull slope |
| Keyword(4) | dielectric breakdown |
| Keyword(5) | image sensor |
| Keyword(6) | GaN |
| Keyword(7) | SiC |
| Keyword(8) | power device |
| 1st Author's Name | Kenji Okada |
| 1st Author's Affiliation | TowerJazz Panasonic Semiconductor Co., Ltd.(TowerJazz Panasonic Semiconductor) |
| Date | 2019-08-22 |
| Paper # | R2019-25,EMD2019-23,CPM2019-24,OPE2019-52,LQE2019-30 |
| Volume (vol) | vol.119 |
| Number (no) | R-169,EMD-170,CPM-171,OPE-172,LQE-173 |
| Page | pp.pp.29-34(R), pp.29-34(EMD), pp.29-34(CPM), pp.29-34(OPE), pp.29-34(LQE), |
| #Pages | 6 |
| Date of Issue | 2019-08-15 (R, EMD, CPM, OPE, LQE) |