| Presentation | 2019-08-09 Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics of a bilayer tunneling FET (TFET) with an oxide semiconductor channel (OS) and a group-IV semiconductor source. TCAD simulation revealed that the threshold voltage for band-to-band tunneling strongly varies with the OS channel thickness, indicating that the channel thickness non-uniformity could affect the sub-threshold characteristics of the bilayer TFET. In order to improve the channel thickness uniformity, we have developed the ZnSnO deposition condition to realize high thickness uniformity and have achieved the improvement of the sub-threshold characteristics with the amorphous ZnSnO channel layer. On the other hand, it has also been found that existence of tail-states related to the amorphous structure could be one of physical reasons to limit the sub-threshold characteristics of the bilayer TFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | bilayer / TFET / ZnSnO / amorphous / uniformity / sub-threshold characteristics |
| Paper # | SDM2019-46,ICD2019-11 |
| Date of Issue | 2019-07-31 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2019/8/7(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Graduate School /Faculty of Information Science and |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / 秋田 純一(金沢大)) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Masafumi Takahashi(Toshiba-memory) / 廣瀬 裕(パナソニック) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) / Masafumi Takahashi(TOSHIBA MEMORY) / 廣瀬 裕(Tohoku Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs |
| Sub Title (in English) | |
| Keyword(1) | bilayer |
| Keyword(2) | TFET |
| Keyword(3) | ZnSnO |
| Keyword(4) | amorphous |
| Keyword(5) | uniformity |
| Keyword(6) | sub-threshold characteristics |
| 1st Author's Name | Kimihiko Kato |
| 1st Author's Affiliation | The University of Tokyo/National Institute of Advanced Industrial Science and Technology(Univ. of Tokyo/AIST) |
| 2nd Author's Name | Hiroaki Matsui |
| 2nd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 3rd Author's Name | Hitoshi Tabata |
| 3rd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 4th Author's Name | Mitsuru Takenaka |
| 4th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 5th Author's Name | Shinichi Takagi |
| 5th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| Date | 2019-08-09 |
| Paper # | SDM2019-46,ICD2019-11 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-161,ICD-162 |
| Page | pp.pp.63-66(SDM), pp.63-66(ICD), |
| #Pages | 4 |
| Date of Issue | 2019-07-31 (SDM, ICD) |