Presentation 2019-08-09
[Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application
Reika Ichihara, Shosuke Fujii, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We demonstrated a cross-point memory array composed of Ag ionic memory cell with sub-μA and selectorless operation and 10-year data retention, making it a promising candidate for terabit-scale high-density memory application. Discontinuous conductive path with large and dense Ag clusters enabled 10-year retention even at sub-μA current with keeping high non-linearity in I-V. We implemented, for the first time, the improved cell into a cross-point array and demonstrated narrow read distribution which satisfies requirements for reliable array operation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) ionic memory / cross-point / Ag / retention / non-linearity
Paper # SDM2019-50,ICD2019-15
Date of Issue 2019-07-31 (SDM, ICD)

Conference Information
Committee SDM / ICD / ITE-IST
Conference Date 2019/8/7(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Hokkaido Univ., Graduate School /Faculty of Information Science and
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
Chair Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / 秋田 純一(金沢大))
Vice Chair Hiroshige Hirano(TowerJazz Panasonic) / Masafumi Takahashi(Toshiba-memory) / 廣瀬 裕(パナソニック)
Secretary Hiroshige Hirano(Shizuoka Univ.) / Masafumi Takahashi(TOSHIBA MEMORY) / 廣瀬 裕(Tohoku Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application
Sub Title (in English)
Keyword(1) ionic memory
Keyword(2) cross-point
Keyword(3) Ag
Keyword(4) retention
Keyword(5) non-linearity
1st Author's Name Reika Ichihara
1st Author's Affiliation Toshiba Memory Corporation(TMC)
2nd Author's Name Shosuke Fujii
2nd Author's Affiliation Toshiba Memory Corporation(TMC)
3rd Author's Name Takuya Konno
3rd Author's Affiliation Toshiba Memory Corporation(TMC)
4th Author's Name Marina Yamaguchi
4th Author's Affiliation Toshiba Memory Corporation(TMC)
5th Author's Name Harumi Seki
5th Author's Affiliation Toshiba Memory Corporation(TMC)
6th Author's Name Hiroki Tanaka
6th Author's Affiliation Toshiba Memory Corporation(TMC)
7th Author's Name Dandan Zhao
7th Author's Affiliation Toshiba Memory Corporation(TMC)
8th Author's Name Yoko Yoshimura
8th Author's Affiliation Toshiba Memory Corporation(TMC)
9th Author's Name Masumi Saitoh
9th Author's Affiliation Toshiba Memory Corporation(TMC)
10th Author's Name Masato Koyama
10th Author's Affiliation Toshiba Memory Corporation(TMC)
Date 2019-08-09
Paper # SDM2019-50,ICD2019-15
Volume (vol) vol.119
Number (no) SDM-161,ICD-162
Page pp.pp.85-88(SDM), pp.85-88(ICD),
#Pages 4
Date of Issue 2019-07-31 (SDM, ICD)