| Presentation | 2019-08-07 TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channelmaterials which realize ultra-scaling of MOSFET transistors. However, a high contact resistance between a 2D channel and anelectrode has been one of critical issue for the application of the 2D channel FET, and the contact resistance becomes significantlylarge for the channels of several monolayer thickness. In this paper, we have numerically investigated the transfer characteristicsof the 2D channel FETs and clarified the fringe-filed effect on the contact resistance in ultra-thin channel FETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | 2D channel FET / Contact resistance / Fringe field / TCAD simulation |
| Paper # | SDM2019-37,ICD2019-2 |
| Date of Issue | 2019-07-31 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2019/8/7(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Graduate School /Faculty of Information Science and |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / 秋田 純一(金沢大)) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Masafumi Takahashi(Toshiba-memory) / 廣瀬 裕(パナソニック) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) / Masafumi Takahashi(TOSHIBA MEMORY) / 廣瀬 裕(Tohoku Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET |
| Sub Title (in English) | |
| Keyword(1) | 2D channel FET |
| Keyword(2) | Contact resistance |
| Keyword(3) | Fringe field |
| Keyword(4) | TCAD simulation |
| 1st Author's Name | Hidehiro Asai |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Wen Hsin Chang |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Naoya Okada |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Koich Fukuda |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Toshifumi Irisawa |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2019-08-07 |
| Paper # | SDM2019-37,ICD2019-2 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-161,ICD-162 |
| Page | pp.pp.7-10(SDM), pp.7-10(ICD), |
| #Pages | 4 |
| Date of Issue | 2019-07-31 (SDM, ICD) |