| Presentation | 2019-08-08 Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The extreme value theory was applied to the estimation of the maximum SRAM data retention voltage (DRV). It was found that, using a device matrix array (DMA) TEG with bulk 6T SRAM cells fabricated by the 65 nm technology, the block maximum DRV of SRAM arrays follows a Gumbel distribution. This method makes it possible to estimate the maximum DRV of large scale SRAMs simply by measuring several SRAM array blocks without measuring all the SRAM arrays. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SRAM / data retention voltage / extreme value theory |
| Paper # | SDM2019-41,ICD2019-6 |
| Date of Issue | 2019-07-31 (SDM, ICD) |
| Conference Information | |
| Committee | SDM / ICD / ITE-IST |
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| Conference Date | 2019/8/7(3days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Graduate School /Faculty of Information Science and |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Chair | Takahiro Shinada(Tohoku Univ.) / Makoto Nagata(Kobe Univ.) / 秋田 純一(金沢大)) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Masafumi Takahashi(Toshiba-memory) / 廣瀬 裕(パナソニック) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) / Masafumi Takahashi(TOSHIBA MEMORY) / 廣瀬 裕(Tohoku Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tetsuya Hirose(Osaka Univ.) / Koji Nii(Floadia) / Takeshi Kuboki(Kyushu Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage |
| Sub Title (in English) | |
| Keyword(1) | SRAM |
| Keyword(2) | data retention voltage |
| Keyword(3) | extreme value theory |
| 1st Author's Name | Tomoko Mizutani |
| 1st Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 2nd Author's Name | Kiyoshi Takeuchi |
| 2nd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 3rd Author's Name | Takuya Saraya |
| 3rd Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 4th Author's Name | Masaharu Kobayashi |
| 4th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| 5th Author's Name | Toshiro Hiramoto |
| 5th Author's Affiliation | The University of Tokyo(Univ. of Tokyo) |
| Date | 2019-08-08 |
| Paper # | SDM2019-41,ICD2019-6 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-161,ICD-162 |
| Page | pp.pp.27-30(SDM), pp.27-30(ICD), |
| #Pages | 4 |
| Date of Issue | 2019-07-31 (SDM, ICD) |