| Presentation | 2019-07-25 SiC MOSFET Class-E Inverter with a Class-Φ High-Speed Driver Haruma Yogi, Xiuqin Wei, Hiroo Sekiya, Takashi Hikihara, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper presents a design challenge of a SiC MOSFET class-E inverter with a class-$Phi $ high-speed driver. The driver is based on a class-$Phi $ inverter which is a novel class-E inverter with a harmonic resonant filter, enabling the driver to achieve not only the class-E ZVS/ZDS conditions but also a low switch-voltage stress. In this paper, the class-E inverter and its driver are regarded as a whole system to be designed. Additionally, the whole system is designed by using the numerical design procedure. A design example is also given along with its laboratory experiment under 102 W output power and 13.56 MHz operating frequency. All the switch-voltage waveforms obtained from laboratory experiment satisfy the class-E ZVS/ZDS conditions. It is also seen from the experimental results that the numerical calculations agreed with the experimental ones quantitatively, which shows the validity of the design procedure presented in this paper. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | class-E inverter / ZVS/ZDS conditions / SiC MOSFET / driver / high-frequency and high-efficiency |
| Paper # | EE2019-25 |
| Date of Issue | 2019-07-17 (EE) |
| Conference Information | |
| Committee | EE / IEE-SPC |
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| Conference Date | 2019/7/24(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Tadatoshi Babasaki(NTT Facilities) |
| Vice Chair | Keiichi Hirose(NTT Facilities) / Tadashi Suetsugu(Fukuoka Univ.) |
| Secretary | Keiichi Hirose(Sojo Univ.) / Tadashi Suetsugu(Nagasaki Inst. of Applied Science) |
| Assistant | Takashi Matsushita(NTT-F) / Tetsuya Oshikata(ShinDengen) / Yuu Yonezawa(FUJITSU Advanced Technologies) |
| Paper Information | |
| Registration To | Technical Committee on Energy Engineering in Electronics and Communications / Technical Meeting on Semiconductor Power Converter |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | SiC MOSFET Class-E Inverter with a Class-Φ High-Speed Driver |
| Sub Title (in English) | |
| Keyword(1) | class-E inverter |
| Keyword(2) | ZVS/ZDS conditions |
| Keyword(3) | SiC MOSFET |
| Keyword(4) | driver |
| Keyword(5) | high-frequency and high-efficiency |
| 1st Author's Name | Haruma Yogi |
| 1st Author's Affiliation | Chiba Institute of Technology(Chiba Tech) |
| 2nd Author's Name | Xiuqin Wei |
| 2nd Author's Affiliation | Chiba Institute of Technology(Chiba Tech) |
| 3rd Author's Name | Hiroo Sekiya |
| 3rd Author's Affiliation | Chiba University(Chiba Univ.) |
| 4th Author's Name | Takashi Hikihara |
| 4th Author's Affiliation | Kyoto University(Kyoto Univ.) |
| Date | 2019-07-25 |
| Paper # | EE2019-25 |
| Volume (vol) | vol.119 |
| Number (no) | EE-146 |
| Page | pp.pp.49-52(EE), |
| #Pages | 4 |
| Date of Issue | 2019-07-17 (EE) |