Presentation 2019-06-21
Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures
Takuji Hosoi, Kidist Moges, Mitsuru Sometani, Takayoshi Shimura, Shinsuke Harada, Heiji Watanabe,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2019-25
Date of Issue 2019-06-14 (SDM)

Conference Information
Committee SDM
Conference Date 2019/6/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Nagoya Univ. VBL3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Material Science and Process Technology for MOS Devices and Memories
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures
Sub Title (in English)
Keyword(1)
1st Author's Name Takuji Hosoi
1st Author's Affiliation Osaka University(Osaka Univ.)
2nd Author's Name Kidist Moges
2nd Author's Affiliation Osaka University(Osaka Univ.)
3rd Author's Name Mitsuru Sometani
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
4th Author's Name Takayoshi Shimura
4th Author's Affiliation Osaka University(Osaka Univ.)
5th Author's Name Shinsuke Harada
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
6th Author's Name Heiji Watanabe
6th Author's Affiliation Osaka University(Osaka Univ.)
Date 2019-06-21
Paper # SDM2019-25
Volume (vol) vol.119
Number (no) SDM-96
Page pp.pp.1-4(SDM),
#Pages 4
Date of Issue 2019-06-14 (SDM)