| Presentation | 2019-06-21 Chemical Structure and Electronic States of HfSiOx/GaN(0001) Akio Ohta, Katunori Makihara, Toshihide Nabatame, Koji Shiozaki, Seiichi Miyazaki, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A HfSiOx layer with different Hf/(Hf+Si) composition ratio was formed on wet chemically-cleaned GaN(0001) using ALD, and then post deposition annealing at 800?C in N2 ambience was performed to densify the dielectric layer. Chemical structure and electronic state for the samples were characterized by using x-ray photoelectron spectroscopy (XPS) and total photoelectron yield spectroscopy (PYS). Changes in chemical bonding features of HfSiOx with Hf content were investigated from Si 2p, Hf 4f, and O 1s core-line spectra. Energy band offset between HfSiOx and GaN were determined by the combination of the valence band maximum energy from the vacuum level with the bandgap (Eg) value. PYS analysis shows that of filled electronic defects in the HfSiOx at the energy region from midgap to conduction band were significantly decreased as compared to HfO2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HfSiOx / GaN / Photoelectron Spectroscopy / Electronic States |
| Paper # | SDM2019-35 |
| Date of Issue | 2019-06-14 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Chemical Structure and Electronic States of HfSiOx/GaN(0001) |
| Sub Title (in English) | |
| Keyword(1) | HfSiOx |
| Keyword(2) | GaN |
| Keyword(3) | Photoelectron Spectroscopy |
| Keyword(4) | Electronic States |
| 1st Author's Name | Akio Ohta |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Katunori Makihara |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Toshihide Nabatame |
| 3rd Author's Affiliation | National Institute for Materials Science(NIMS) |
| 4th Author's Name | Koji Shiozaki |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2019-06-21 |
| Paper # | SDM2019-35 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-96 |
| Page | pp.pp.47-51(SDM), |
| #Pages | 5 |
| Date of Issue | 2019-06-14 (SDM) |