| Presentation | 2019-06-21 Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ge1－xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole than Si and Ge. For the practical application, it is essential to reduce the contact resistivity at the metal/n-type Ge1－xSnx interface down to as low as 10?9 Ω?cm2. To reduce the contact resistivity, heavily n-type doping in Ge1－xSnx is necessary whereas n-type dopants of Ge have low solid solubility limits and large diffusion coefficients. Recently, we achieved n+-Ge1－xSnx growth with a superior crystallinity and a high electron concentration of 1020 cm－3 by in-situ Sb doping under non-thermal equilibrium conditions. In this study, we succeeded the formation of Ni(Ge1－xSnx) on n+-Ge1－xSnx by the relatively low-temperature annealing at 350 ?C without Sn segregation. As a result, an ultra-low resistivity contact of n-type Ge1－xSnx as low as 10－9 Ω?cm2 was achieved with the Ni(Ge1－xSnx)/Sb-doped Ge0.935Sn0.065 sample with an electron concentration of 1.8×1020 cm－3. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ge1－xSnxSbn-type dopingcontact resistivity |
| Paper # | SDM2019-26 |
| Date of Issue | 2019-06-14 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | ENG-JTITLE |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation |
| Sub Title (in English) | |
| Keyword(1) | Ge1－xSnxSbn-type dopingcontact resistivity |
| 1st Author's Name | Jihee Jeon |
| 1st Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 2nd Author's Name | Akihiro Suzuki |
| 2nd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 3rd Author's Name | Shigehisa Shibayama |
| 3rd Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 4th Author's Name | Shigeaki Zaima |
| 4th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| 5th Author's Name | Osamu Nakatsuka |
| 5th Author's Affiliation | Nagoya University(Nagoya Univ.) |
| Date | 2019-06-21 |
| Paper # | SDM2019-26 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-96 |
| Page | pp.pp.5-9(SDM), |
| #Pages | 5 |
| Date of Issue | 2019-06-14 (SDM) |