| Presentation | 2019-05-16 Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. For the reduction of dark leakage current in Ge pin photodiodes, formation of flat Ge/Si interface is important together with the reduction of threading dislocation density in the Ge layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si photonics / Germanium / Epitaxial Growth / Near-infrared Photodetectors |
| Paper # | ED2019-11,CPM2019-2,SDM2019-9 |
| Date of Issue | 2019-05-09 (ED, CPM, SDM) |
| Conference Information | |
| Committee | SDM / ED / CPM |
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| Conference Date | 2019/5/16(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ. (Hamamatsu) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Materials, Fabrication, and Characterization of Functional Devices, and Related Technology |
| Chair | Takahiro Shinada(Tohoku Univ.) / Kunio Tsuda(Toshiba) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Michihiko Suhara(TMU) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) / Michihiko Suhara(TOSHIBA MEMORY) / Mayumi Takeyama(NICT) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si |
| Sub Title (in English) | |
| Keyword(1) | Si photonics |
| Keyword(2) | Germanium |
| Keyword(3) | Epitaxial Growth |
| Keyword(4) | Near-infrared Photodetectors |
| 1st Author's Name | Mayu Tachibana |
| 1st Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| 2nd Author's Name | Shuhei Sonoi |
| 2nd Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| 3rd Author's Name | Yasuhiko Ishikawa |
| 3rd Author's Affiliation | Toyohashi University of Technology(Toyohashi Univ. Tech.) |
| Date | 2019-05-16 |
| Paper # | ED2019-11,CPM2019-2,SDM2019-9 |
| Volume (vol) | vol.119 |
| Number (no) | ED-34,CPM-35,SDM-36 |
| Page | pp.pp.5-8(ED), pp.5-8(CPM), pp.5-8(SDM), |
| #Pages | 4 |
| Date of Issue | 2019-05-09 (ED, CPM, SDM) |