| Presentation | 2019-05-16 Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Takashi Morie, Yasuo Takahashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For showing some of the important features of realizing artificial neural network in a hardware-aspect, resistive random access memory has been drawing researchers’ attention since the research booming of artificial intelligence. Here we are trying to reveal the underlaying switching mechanism to take ReRAM to an applicable stage. We focused on the two reported hypotheses of mechanisms, VCM and ECM, using Ta and Cu top electrodes (TEs), respectively. For the measurement results on initial states and during-switching, we clarified that samples with Ta-TE show strong dependency of switching capability on the initial resistance. For samples with Cu-TE applied, we found an mutual point of fabrication conditions that were showing perfectly coincided forming processes, despite of unpredicted lower initial resistances caused by diffusion of Cu atoms. This suggests that the insulator fabricated with 0% oxygen ambient has weak dependency on top electrode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | resistive memory / artificial synapse / multilevel switching / tantalum oxide / top electrode |
| Paper # | ED2019-16,CPM2019-7,SDM2019-14 |
| Date of Issue | 2019-05-09 (ED, CPM, SDM) |
| Conference Information | |
| Committee | SDM / ED / CPM |
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| Conference Date | 2019/5/16(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ. (Hamamatsu) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Materials, Fabrication, and Characterization of Functional Devices, and Related Technology |
| Chair | Takahiro Shinada(Tohoku Univ.) / Kunio Tsuda(Toshiba) / Fumihiko Hirose(Yamagata Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) / Michihiko Suhara(TMU) / Mayumi Takeyama(Kitami Inst. of Tech.) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) / Michihiko Suhara(TOSHIBA MEMORY) / Mayumi Takeyama(NICT) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) / Tatsuya Iwata(TUT) / Junji Kotani(Fjitsu Lab.) / Yasuo Kimura(Tokyo Univ. of Tech.) / Hideki Nakazawa(Hirosaki Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode |
| Sub Title (in English) | |
| Keyword(1) | resistive memory |
| Keyword(2) | artificial synapse |
| Keyword(3) | multilevel switching |
| Keyword(4) | tantalum oxide |
| Keyword(5) | top electrode |
| 1st Author's Name | Yuanlin Li |
| 1st Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 2nd Author's Name | Atsushi Tsurumaki-Fukuchi |
| 2nd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 3rd Author's Name | Masashi Arita |
| 3rd Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| 4th Author's Name | Takashi Morie |
| 4th Author's Affiliation | Kyushu Institute of Technology(Kyushu Inst. Tech.) |
| 5th Author's Name | Yasuo Takahashi |
| 5th Author's Affiliation | Hokkaido University(Hokkaido Univ.) |
| Date | 2019-05-16 |
| Paper # | ED2019-16,CPM2019-7,SDM2019-14 |
| Volume (vol) | vol.119 |
| Number (no) | ED-34,CPM-35,SDM-36 |
| Page | pp.pp.29-34(ED), pp.29-34(CPM), pp.29-34(SDM), |
| #Pages | 6 |
| Date of Issue | 2019-05-09 (ED, CPM, SDM) |