| Presentation | 2019-03-17 MOSFET-based ultra high resistance configuration for ultra low current sensing Xinghuai Zhang, Shigetoshi Nakatake, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this work, we propose a method to configure an ultrahigh resistance of 1GΩ or more on a chip, which is used for I-V conversion circuit, in order to detect ultra-weak currents of several pA ~nA. In our method, a desired resistance value is realized by connecting MOSFETs in the cutoff region in series-parallel. The influence of I-V conversion characteristic, temperature characteristic, area due to the difference in the number of stages of series-parallel connection is confirmed by simulation. Hence, an appropriate configuration method is derived. We also compare with the existing Poly resistance and discuss the practicality of proposed MOSFET resistance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | On-chip resistance / Ultrahigh resistance / I-V converter / Ultra weak current sensing |
| Paper # | CPSY2018-103,DC2018-85 |
| Date of Issue | 2019-03-10 (CPSY, DC) |
| Conference Information | |
| Committee | CPSY / DC / IPSJ-SLDM / IPSJ-EMB / IPSJ-ARC |
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| Conference Date | 2019/3/17(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nishinoomote City Hall (Tanega-shima) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | ETNET2019 |
| Chair | Koji Nakano(Hiroshima Univ.) / Satoshi Fukumoto(Tokyo Metropolitan Univ.) / Yutaka Tamiya(Fujitsu Lab.) / / Masahiro Goshima(NII) |
| Vice Chair | Hidetsugu Irie(Univ. of Tokyo) / Takashi Miyoshi(Fujitsu) / Hiroshi Takahashi(Ehime Univ.) |
| Secretary | Hidetsugu Irie(Utsunomiya Univ.) / Takashi Miyoshi(Hokkaido Univ.) / Hiroshi Takahashi(Tokyo Inst. of Tech.) / (Nihon Univ.) / (NEC) / (Kochi Univ. of Tech.) |
| Assistant | Yasuaki Ito(Hiroshima Univ.) / Tomoaki Tsumura(Nagoya Inst. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Computer Systems / Technical Committee on Dependable Computing / Special Interest Group on System and LSI Design Methodology / Special Interest Group on Embedded Systems / Special Interest Group on System Architecture |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOSFET-based ultra high resistance configuration for ultra low current sensing |
| Sub Title (in English) | |
| Keyword(1) | On-chip resistance |
| Keyword(2) | Ultrahigh resistance |
| Keyword(3) | I-V converter |
| Keyword(4) | Ultra weak current sensing |
| 1st Author's Name | Xinghuai Zhang |
| 1st Author's Affiliation | The University of Kitakyushu(Univ. of Kitakyushu) |
| 2nd Author's Name | Shigetoshi Nakatake |
| 2nd Author's Affiliation | The University of Kitakyushu(Univ. of Kitakyushu) |
| Date | 2019-03-17 |
| Paper # | CPSY2018-103,DC2018-85 |
| Volume (vol) | vol.118 |
| Number (no) | CPSY-514,DC-515 |
| Page | pp.pp.103-108(CPSY), pp.103-108(DC), |
| #Pages | 6 |
| Date of Issue | 2019-03-10 (CPSY, DC) |