Presentation 2019-02-07
[Invited Talk] New contact material for advanced CMOS: cluster-preforming-deposited amorphous Si-rich W silicide film
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Toshihiko Kanayama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2018-96
Date of Issue 2019-01-31 (SDM)

Conference Information
Committee SDM
Conference Date 2019/2/7(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English) Backend / Assembly and Related materials technology
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] New contact material for advanced CMOS: cluster-preforming-deposited amorphous Si-rich W silicide film
Sub Title (in English)
Keyword(1)
1st Author's Name Naoya Okada
1st Author's Affiliation National Institute of Advanced Industrial Science & Technology(AIST)
2nd Author's Name Noriyuki Uchida
2nd Author's Affiliation National Institute of Advanced Industrial Science & Technology(AIST)
3rd Author's Name Shinichi Ogawa
3rd Author's Affiliation National Institute of Advanced Industrial Science & Technology(AIST)
4th Author's Name Toshihiko Kanayama
4th Author's Affiliation National Institute of Advanced Industrial Science & Technology(AIST)
Date 2019-02-07
Paper # SDM2018-96
Volume (vol) vol.118
Number (no) SDM-438
Page pp.pp.23-26(SDM),
#Pages 4
Date of Issue 2019-01-31 (SDM)