| Presentation | 2019-02-07 [Invited Talk] Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV) Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The methods as parylene substitute of SiO2 as dielectric layer and annular structure lose efficacy for thermal stress reduction with Through Silicon Via (TSV) scaling down. A novel Annular-Trench-Isolated (ATI) TSV structure was proposed to reduce thermal stress level in Si substrate. A ring of Si is remained between the metal core and insulator layer. The ATI TSV was successfully fabricated with two separate etching processes for the insulator parylene-HT trench and the metal solder core. The thermal stress of ATI TSV was investigated by polarized Raman spectroscopy measurements with varying temperature, indicating lower stress level than regular TSV. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Through Silicon Via (TSV)Thermal StressPolarized Raman Spectroscopy Measurements |
| Paper # | SDM2018-93 |
| Date of Issue | 2019-01-31 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/2/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Backend / Assembly and Related materials technology |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV) |
| Sub Title (in English) | |
| Keyword(1) | Through Silicon Via (TSV)Thermal StressPolarized Raman Spectroscopy Measurements |
| 1st Author's Name | Wei Feng |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Naoya Watanabe |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Haruo Shimamoto |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Masahiro Aoyagi |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Katsuya Kikuchi |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2019-02-07 |
| Paper # | SDM2018-93 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-438 |
| Page | pp.pp.9-14(SDM), |
| #Pages | 6 |
| Date of Issue | 2019-01-31 (SDM) |