Presentation 2019-01-29
[Invited Talk] Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process
Hideo Sato, Tetsuo Endoh,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper #
Date of Issue

Conference Information
Committee SDM
Conference Date 2019/1/29(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process
Sub Title (in English)
Keyword(1)
1st Author's Name Hideo Sato
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Tetsuo Endoh
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2019-01-29
Paper #
Volume (vol) vol.118
Number (no) SDM-429
Page pp.pp.-(),
#Pages
Date of Issue