Presentation | 2019-01-29 [Invited Talk] Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process Hideo Sato, Tetsuo Endoh, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
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Keyword(in Japanese) | (See Japanese page) |
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Conference Information | |
Committee | SDM |
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Conference Date | 2019/1/29(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) | (See Japanese page) |
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Chair | Takahiro Shinada(Tohoku Univ.) |
Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
Secretary | Hiroshige Hirano(Shizuoka Univ.) |
Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Demonstration of high-speed switching, high thermal stability, and high endurance in 128Mb-density STT-MRAM by development of integration process |
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1st Author's Name | Hideo Sato |
1st Author's Affiliation | Tohoku University(Tohoku Univ.) |
2nd Author's Name | Tetsuo Endoh |
2nd Author's Affiliation | Tohoku University(Tohoku Univ.) |
Date | 2019-01-29 |
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Volume (vol) | vol.118 |
Number (no) | SDM-429 |
Page | pp.pp.-(), |
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