| Presentation | 2019-01-29 [Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata, Jun Nara, Takahiro Yamasaki, Kyoko Sumita, Ryousuke Sano, Hiroshi Nohira, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO2/SiO2 MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nonvolatile memory / Interface dipole / MOSFET / Gate dielectric layer / HfO2 / SiO2 |
| Paper # | SDM2018-87 |
| Date of Issue | 2019-01-22 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/1/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure |
| Sub Title (in English) | |
| Keyword(1) | Nonvolatile memory |
| Keyword(2) | Interface dipole |
| Keyword(3) | MOSFET |
| Keyword(4) | Gate dielectric layer |
| Keyword(5) | HfO2 |
| Keyword(6) | SiO2 |
| 1st Author's Name | Noriyuki Miyata |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 2nd Author's Name | Jun Nara |
| 2nd Author's Affiliation | National Institute for Materials Science(NIMS) |
| 3rd Author's Name | Takahiro Yamasaki |
| 3rd Author's Affiliation | National Institute for Materials Science(NIMS) |
| 4th Author's Name | Kyoko Sumita |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Ryousuke Sano |
| 5th Author's Affiliation | Tokyo City University(TCU) |
| 6th Author's Name | Hiroshi Nohira |
| 6th Author's Affiliation | Tokyo City University(TCU) |
| Date | 2019-01-29 |
| Paper # | SDM2018-87 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-429 |
| Page | pp.pp.27-30(SDM), |
| #Pages | 4 |
| Date of Issue | 2019-01-22 (SDM) |