| Presentation | 2019-01-29 [Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping technique is demonstrated for the first time. Al nanoclusters increase the remnant polarization (Pr) and reduce the voltage necessary for polarization switching. Furthermore, the program and erase endurance at the cycle of more than 250k and the Pr retention at 85?C for 10 years are achieved. Al nanoclusters are formed by the partial oxidation of sub-monolayer metallic Al embedded in HZO films. Al nanoclusters enhance the large grain growth of orthorhombic-phase HZO during FE-HZO crystallization annealing. The reduction of grain boundaries caused by the large grain growth with Al nanoclusters effectively reduces the leakage current in the HZO film. As a result, reliability of the FE HZO film is significantly improved. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric / Hf0.5Zr0.5O2 / Al nanocluster / Al doping / FeFET memory |
| Paper # | SDM2018-86 |
| Date of Issue | 2019-01-22 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/1/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric |
| Keyword(2) | Hf0.5Zr0.5O2 |
| Keyword(3) | Al nanocluster |
| Keyword(4) | Al doping |
| Keyword(5) | FeFET memory |
| 1st Author's Name | Tadashi Yamaguchi |
| 1st Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 2nd Author's Name | Tiantian Zhang |
| 2nd Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 3rd Author's Name | Kazuyuki Omori |
| 3rd Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 4th Author's Name | Yasuhiro Shimada |
| 4th Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 5th Author's Name | Yorinobu Kunimune |
| 5th Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 6th Author's Name | Takashi Ide |
| 6th Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 7th Author's Name | Masao Inoue |
| 7th Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| 8th Author's Name | Masazumi Matsuura |
| 8th Author's Affiliation | Renesas Electronics Corp.(Renesas) |
| Date | 2019-01-29 |
| Paper # | SDM2018-86 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-429 |
| Page | pp.pp.21-26(SDM), |
| #Pages | 6 |
| Date of Issue | 2019-01-22 (SDM) |