| Presentation | 2019-01-29 [Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold characteristics of HfO2-based ferroelectric FET (FeFET) and Anti-FeFET (A-FeFET) by systematically designing and fabricating devices, and monitoring Ig with high resolution. In the circumstances that charge injection prevents polarization switching from occurring in subthreshold region of FeFET, we have obtained two major findings: (1) Sub-60 subthreshold slope (SS) can be realized by adjusting Vg bias sequence, which is attributed to charge injection assisted by polarization switching. (2) Anti-ferroelectric facilitates to align polarization switching in subthreshold region and SS can be improved in A-FeFET, which is directly observed by monitoring Ig. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Steep SS / ferroelectric HfO2 / polarization switching |
| Paper # | SDM2018-84 |
| Date of Issue | 2019-01-22 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/1/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | [Invited Talk] The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study |
| Sub Title (in English) | |
| Keyword(1) | Steep SS |
| Keyword(2) | ferroelectric HfO2 |
| Keyword(3) | polarization switching |
| 1st Author's Name | Chengji Jin |
| 1st Author's Affiliation | University of Tokyo(Univ. of Tokyo) |
| 2nd Author's Name | Kyungmin Jang |
| 2nd Author's Affiliation | University of Tokyo(Univ. of Tokyo) |
| 3rd Author's Name | Takuya Saraya |
| 3rd Author's Affiliation | University of Tokyo(Univ. of Tokyo) |
| 4th Author's Name | Toshiro Hiramoto |
| 4th Author's Affiliation | University of Tokyo(Univ. of Tokyo) |
| 5th Author's Name | Masaharu Kobayashi |
| 5th Author's Affiliation | University of Tokyo(Univ. of Tokyo) |
| Date | 2019-01-29 |
| Paper # | SDM2018-84 |
| Volume (vol) | vol.118 |
| Number (no) | SDM-429 |
| Page | pp.pp.13-16(SDM), |
| #Pages | 4 |
| Date of Issue | 2019-01-22 (SDM) |