Presentation 2019-01-29
[Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors
Shinji Migita, Hiroyuki Ota, Akira Thorium,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-FETs) many times, and those reports suggest that they are caused by the negative capacitance effect (NC-Effect). However, the definition and the criteria for the NC-effect are still unclear. Therefore, it is not easy to conclude that all of those results come from the NC-effect. In this work, we prepared FE-FETs that consist of the metal-ferroelectric-metal-insulator- semiconductor (MFMIS) gates stack structures with different area ratios between MIS and MFM capacitors. We observed that the steep-SS behavior becomes remarkable in the FE-FET with appropriate capacitance ratio. We think that this phenomena is explainable from the viewpoint of redistribution of voltage in the gate stack caused by the electronic charge emerged in the process of the polarization reversal in the ferroelectric capacitors.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) steep subthreshold swing / negative capacitance / ferroelectricity / HfO2 / transistor
Paper # SDM2018-82
Date of Issue 2019-01-22 (SDM)

Conference Information
Committee SDM
Conference Date 2019/1/29(1days)
Place (in Japanese) (See Japanese page)
Place (in English) Kikai-Shinko-Kaikan Bldg.
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors
Sub Title (in English)
Keyword(1) steep subthreshold swing
Keyword(2) negative capacitance
Keyword(3) ferroelectricity
Keyword(4) HfO2
Keyword(5) transistor
1st Author's Name Shinji Migita
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
2nd Author's Name Hiroyuki Ota
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
3rd Author's Name Akira Thorium
3rd Author's Affiliation The University of Tokyo(U. Tokyo)
Date 2019-01-29
Paper # SDM2018-82
Volume (vol) vol.118
Number (no) SDM-429
Page pp.pp.5-8(SDM),
#Pages 4
Date of Issue 2019-01-22 (SDM)