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| Presentation | 2019-01-17 15:50 Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) |
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| PDF Download Link |  ED2018-79 MW2018-146 Link to ES Tech. Rep. Archives: ED2018-79 MW2018-146 |
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